#  Publications 

 



[Simple thermal vapor deposition process for and characterization of n-type indium oxysulfide thin films](https://avs.scitation.org/doi/pdf/10.1116/6.0001997)  
Jayaraman, Ashwin; Kim, Sang Bok; David, Luke M.; Lou, Xiabing; Gordon, Roy G.  
**(2022)** J. Vac. Sci. Technol. A 40(6)

[Anthraquinone Flow Battery Reactants with Nonhydrolyzable Water-Solubilizing Chains Introduced via a Generic Cross-Coupling Method](https://pubs.acs.org/doi/abs/10.1021/acsenergylett.1c02504)  
Jing, Yan; Fell, Eric M.; Wu, Min; Jin, Shijian; Ji, Yunlong; Pollack, Daniel A.; Tang, Zhijiang; Ding, Dian; Bahari, Meisam; Goulet, Marc-Antoni; Tsukamoto; Tatsuhiro; Gordon, Roy G.; Aziz, Michael J.   
**(2021)** ACS Energy Letters**:** 226–235  
  
[Functioning Water-Insoluble Ferrocenes for Aqueous Organic Flow Battery via Host–Guest Inclusion](https://pubmed.ncbi.nlm.nih.gov/33295127/)  
Li , Yuanyuan; Xu, Ziang; Liu, Yahua; Jin, Shijian; Fell, Eric M.; Wang, Baoguo; Gordon, Roy G.;  Aziz, Michael J.; Yang, Zhengjin; Xu, Tongwen   
**(2021)** ChemSusChem 14, 2:745-752

[Study of the crystal structure of SnS thin films by atomic layer deposition](https://aip.scitation.org/doi/10.1063/5.0032782)  
Zhao, Xizhu; Davis, Luke M.; Lou, Xiabing; Kim, Sang Bok; Uličná, Soňa; Jayaraman, Ashwin; Yang, Chuanxi; Shelhas, Laura T.; Gordon, Roy  
**(2021)** AIP Advances 11, 3:035144

[ALD Growth of MgxCa1–xO on GaN and Its Band Offset Analysis](https://pubs.acs.org/doi/abs/10.1021/acsaelm.0c00977)  
Gong, Xian; Lou, Harbing; Kim, Sang Bok; Gordon, Roy G.   
**(2021)** ACS Appl. Electron. Mater*.* 3, 2: 845–853

[Chemical Vapor Deposition of Transparent, p-Type Cuprous Bromide Thin Films](https://pubs.acs.org/doi/full/10.1021/acs.chemmater.0c04586)  
Chang, Christina M.; Davis, Luke M.; Spear. Eliza K.; Gordon, Roy G.  
**(2021)** Chemistry of Materials 33, 4:1426–1434  
  
[Electrochemical Regeneration of Anthraquinones for Lifetime Extension in Flow Batteries](https://chemrxiv.org/engage/chemrxiv/article-details/61109a10abc9e2a3c96988c4)  
Jing, Yan; Zhao, Evan Wenbo; Goulet, Marc-Antoni; Bahari, Meisam; Fell, Eric, Jin, Shijian; Davoodi, Ali ; Jónsson, Erlendur; Wu, Min; Grey, Clare; Gordon, Roy G. Gordon; Aziz, Michael J.   
**(2021)** ChemRxiv.

[Highly Stable Low Redox Potential Quinone for Aqueous Flow Batteries](https://chemrxiv.org/engage/chemrxiv/article-details/619e6d3d5f114d951765650e)  
Wu, Min; Bahari, Meisam; Jing Yan; Amini, Kiana; Fell, Eric; George, Thomas; Gordon, Roy G.; Aziz, Michael J.  
**(2021)** ChemRxiv.   
  
[Development of Extremely Stable Anthraquinone Negolytes for Aqueous Flow Batteries](https://iopscience.iop.org/article/10.1149/MA2021-013213mtgabs/meta)  
**(2021)** IOP Science: 239th ECS Meeting with the 18th International Meeting on Chemical Sensors (IMCS)

[pH swing cycle for CO2 capture electrochemically driven through proton-coupled electron transfer](https://pubs.rsc.org/en/content/articlelanding/2020/ee/d0ee01834a#!divAbstract)  
Jin,Shijian; Wu, Min; Gordon, Roy G.; Aziz, Michael J.; Kwabi, David G.   
**(2020)** Energy & Environmental Science 13:3706-3722

[Functioning Water‐Insoluble Ferrocenes for Aqueous Organic Flow Battery via Host–Guest Inclusion](https://chemistry-europe.onlinelibrary.wiley.com/doi/full/10.1002/cssc.202002516)  
Li, Yuanyuan; Xu, Ziang; Liu, Yahua; Jin, Shijian; Fell, Eric M.; Wang, Baoguo; Gordon, Roy G.; Aziz, Michael J.; Yang, Zhengjin; Xu, Tongwen   
**(2020)** ChemSusChem 14:745-752  
  
[Synthesis of Electrolytes in Flow Batteries](https://iopscience.iop.org/article/10.1149/MA2020-022218mtgabs/meta)  
Jing, Yan; Wu, Min; Wong, Andrew A.; Fell, Eric M.; Jin, Martin; Pollack, Daniel; Kerr, Emily; Gordon, Roy G.; Aziz, Michael J.  
**(2020)** ECS Meet. Abstr. MA2020-02 218

[In situ electrosynthesis of anthraquinone electrolytes in aqueous flow batteries](https://pubs.rsc.org/en/content/articlelanding/2020/GC/D0GC02236E#!divAbstract)  
Jing, Yan; Wu, Min; Wong, Andrew A.; Fell, Eric M.; Jin, Shijian; Pollack, Daniel A.; Kerr, Emily F.; Gordon, Roy G.; Aziz, Michael J.   
**(2020)** Green Chemistry

[Effect of Molecular Structure of Quinones and Carbon Electrode Surfaces on the Interfacial Electron Transfer Process](https://pubs.acs.org/doi/10.1021/acsaem.9b02357)   
Sedenho, Graziela C.; De Porcellinis, Diana; Jing, Yan; Kerr, Emily; Mejia-Mendoza, Luis M.; Vazquez-Mayagoitia, Alvaro; Aspuru-Guzik, Alan; Gordon, Roy G.; Crespilho, Frank N.; Aziz, Michael J.   
**(2020)** ACS Applied Energy Materials 3 :1933-1943.

[Electrolyte Lifetime in Aqueous Organic Redox Flow Batteries: A Critical Review](https://pubs.acs.org/doi/10.1021/acs.chemrev.9b00599)  
Kwabi, David G.; Ji, Yunlong; Aziz, Michael J.  
**(2020)** Chemical Reviews

[Near Neutral pH Redox Flow Battery with Low Permeability and Long-Lifetime Phosphonated Viologen Active Species](https://onlinelibrary.wiley.com/doi/full/10.1002/aenm.202000100)  
Jin, Shijian;Fell, Eric M.; Vina-Lopez, Lucia; Jing, Yan; Michalak, P. Winston; Gordon, Roy G.; Aziz, Michael J.  
**(2020)** Advanced Energy Materials: 1-10

[Extremely Stable Anthraquinone Negolytes Synthesized from Common Precursors](https://www.sciencedirect.com/science/article/pii/S2451929420301340)  
Min, Wu; Jing, Yan; Wong, Andrew A.; Fell, Eric M.; Jin, Shijian; Tang, Zhijiang; Gordon, Roy G.; Aziz, Michael J.   
**(2020)** Chem 6: 1432–1442  
  
[Epitaxial growth of MgxCa1−xO on 4H–SiC(0001) and β-Ga2O3 wide band gap semiconductors with atomic layer deposition](https://www.cambridge.org/core/journals/journal-of-materials-research/article/epitaxial-growth-of-mgxca1xo-on-4hsic0001-and-ga2o3-left-bar-201-right-wide-band-gap-semiconductors-with-atomic-layer-deposition/6CAF2F06D0906C3F29B03186F8781FAD)  
Lou, Xiabing; Gong, Xian; Kim, Sang Bok; Gordon, Roy G.  
**(2020)** Journal of Materials Research 35: 831-39

[Atomic layer deposition of cubic tin–calcium sulfide alloy films](https://www.cambridge.org/core/journals/journal-of-materials-research/article/atomic-layer-deposition-of-cubic-tincalcium-sulfide-alloy-films/86AE52AD0BE234BC271BD9DC056B0A4D)  
Yang,Chuanxi; Zhao, Xizhu; Kim, Sang Bok; Schelhas, Laura T.; Lou, Xiabing Lou; Gordon, Roy G.   
**(2019)** Journal of Materials Research 35*:* 795-803

[Low Temperature Chemical Vapor Deposition of Cuprous Oxide Thin Films Using a Copper(I) Amidinate Precursor](https://pubs.acs.org/doi/abs/10.1021/acsaem.9b01683)  
Chua, Danny; Kim, Sang Bok; Li, Kecheng; Gordon, Roy  
**(2019)** ACS Applied Energy Materials 2

[Non-corrosive, low-toxicity gel-based microbattery from organic and organometallic molecules](https://pubs.rsc.org/en/content/articlelanding/2019/ta/c9ta08685d#!divAbstract)  
Crespilho, Frank N.; Sedenho, Graziela C.; De Porcellinis, Diana; Kerr, Emily; Granados-Focil, Sergio; Gordon, Roy G.; Aziz, Michael J.  
**(2019)** Journal of Materials Chemistry A: Materials for Energy and Sustainability 7: 24784-24787

[Atomic Layer Deposition of Tin Monosulfide Using Vapor from Liquid Bis(N,​N'-​diisopropylformamidinato)​tin(II) and H2S](https://www.ncbi.nlm.nih.gov/pubmed/31722176)  
Kim, Sang Bok; Zhao, Xizhu; Davis, Luke M.; Jayaraman, Ashwin; Yang, Chuanxi; Gordon, Roy G.  
(2019) ACS Applied Materials & Interfaces 11(49): 45892-45902

[Atomic layer deposition of energy band tunable tin germanium oxide electron transport layer for the SnS-based solar cells with 400 mV open-circuit voltage](https://aip.scitation.org/doi/full/10.1063/1.5098766)  
Chua, Danny; Kim, Sang Bok; Sinsermsuksakul, Prasert; Gordon, Roy   
**(2019)** Applied Physics Letters 114: 213901

[Electrostatically Doped Silicon Nanowire Arrays for Multispectral Photodetectors](https://pubs.acs.org/doi/pdf/10.1021/acsnano.9b05659)  
Um, Han-Don; Solanki, Amit; Jayaraman, Ashwin; Gordon, Roy G.; Habbal, Fawwaz  
**(2019)** ACS Nano 13: 11717−11725

[A Quinone-Based Redox Flow Battery at Near-Neutral pH with Record Capacity Retention Rate](http://ma.ecsdl.org/content/MA2019-01/3/407.short)  
Ji, Yunlong;  Goulet, Marc-Antoni; Pollack, Daniel; Kwabi, David G.; Jin, Shijian; De Porcellinis, Diana; Kerr, Emily; Gordon, Roy G.; Aziz, Michael J.  
**(2019)** Aqueous Systems - Electrolytes/Electrode Materials, The Electrochemical Society

[Spectrally selective detection with In2O3/n-Si radial heterojunction nanowire photodiodes](https://www.osapublishing.org/abstract.cfm?uri=CLEO_SI-2019-SM4J.5)  
Um, Han-Don; Solanki, Amit; Jayaraman, Ashwin; Gordon, Roy G.; Habbal, Fawwaz  
in *Conference on Lasers and Electro-Optics*, OSA Technical Digest, The Optical Society  
**(2019)** paper SM4J.5

[Molecular Engineering of an Alkaline Naphthoquinone Flow Battery](https://pubs.acs.org/doi/10.1021/acsenergylett.9b01321)  
Tong, Liuchuan; Goulet, Marc-Antoni; Tabor, Daniel P.; Kerr, Emily F.; De Porcellinis Diana; Fell, Eric M.; Aspuru-Guzik, Alán; Gordon, Roy G.; Aziz, Michael J.  
ACS Energy Letters   
**(2019)** 4:1880-1887

[A Long Lifetime Aqueous Organic Solar Flow Battery](https://onlinelibrary.wiley.com/doi/abs/10.1002/aenm.201900918)  
Li, Wenjie; Kerr, Emily; Goulet, Marc‐Antoni; Fu, Hui‐Chun; Zhao, Yuzhou; Yang, Ying; Veyssal, Atilla; He, Jr‐Hau; Gordon, Roy G.; Aziz, Michael J.; Jin, Song   
Advanced Energy Materials  
**(2019)** 9:1900918

[Band-Offset Analysis of Atomic Layer Deposition La2O3 on GaAs(111), (110), and (100) Surfaces for Epitaxial Growth](https://pubs.acs.org/doi/pdf/10.1021/acsami.9b08436?rand=r0igxxrg)  
Lou, Xiabing; Gong, Xian, Feng, Jun; Gordon, Roy  
ACS Applied Materials Interfaces  
**(2019)** 11:28515−28519

[Strong, Long, Electrically Conductive and Insulated Coaxial Nanocables](https://pubs.acs.org/doi/abs/10.1021/acsapm.9b00286)  
Aydin, Aykut; Sun, Lu; Gong, Xian; Russell, Kasey J.; Carter, David J. D.; Gordon, Roy G.  
ACS Applied Polymer Materials  
**(2019)** 1:1717-1723

[A High Voltage Aqueous Zinc–Organic Hybrid Flow Battery](https://onlinelibrary.wiley.com/doi/epdf/10.1002/aenm.201900694)  
Park, Minjoon; Beh, Eugene S.; Fell, Eric M.; Jin, Yan; Kerr, Emily F.; De Porcellinis, Diana; Goulet; Marc-Antoni; Ryu, Jaechan; Wong, Andrew W; Gordon, Roy G.; Cho, Jaephil; Aziz, Michael J.   
Advanced Energy  
**(2019)** 9:1900694  
  
[A Water-Miscible Quinone Flow Battery with High Volumetric Capacity and Energy Density](https://pubs.acs.org/doi/abs/10.1021/acsenergylett.9b00739)  
Jin, Shijian; Jing, Yan; Kwabi, David G.; Ji, Yunlong; Tong, Liuchuan; De Porcellinis, Diana; Goulet, Marc-Antoni; Pollack, Daniel A; Gordon, Roy G.; Aziz, Michael J.   
ACS Energy Letters  
**(2019)** 4:1342-1348

[Symmetric All-Quinone Aqueous Battery](https://pubs.acs.org/doi/full/10.1021/acsaem.9b00691#)  
Tong, Liuchuan; Jing, Yan; Gordon, Roy G.; Aziz, Michael J.   
ACS Energy Letters  
**(2019)** 2:4016-4021

[A Long-Lifetime All-Organic Aqueous Flow Battery Utilizing TMAP-TEMPO Radical](https://www.sciencedirect.com/science/article/pii/S2451929419301792?via=ihub)  
Liu, Yahua; Goulet, Marc-Antoni; Tong, Liuchuan; Liu, Yazhi; Ji, Yunlong; Wu, Liang; Gordon, Roy G.; Aziz, Michael J.; Yang, Zhengjin; Xu, Tongwen  
Chem  
**(2019)** 7:1861-1870  
  
[Atomic layer deposition of energy band tunable tin germanium oxide electron transport layer for the SnS-based solar cells with 400 mV open-circuit voltage](https://aip.scitation.org/doi/10.1063/1.5098766)  
Chua, Danny; Kim, Sang Bok; Sinsermsuksakul, Prasert; Gordon, Roy  
Applied Physics Letters  
**(2019)** 114:213901

[Mapping the frontiers of quinone stability in aqueous media: implications for organic aqueous redox flow batteries ](https://pubs.rsc.org/en/content/articlepdf/2019/ta/c9ta03219c)  
Tabor, Daniel P.; Gomez-Bombarelli, Rafael; Tong, Liuchuan; Gordon, Roy G.; Aziz, Michael J.; Aspuru-Guzik, Alán  
Journal of Materials Chemistry A  
**(2019)** 7:12833-12841

[Extending the Lifetime of Organic Flow Batteries via Redox State Management](https://pubs.acs.org/doi/10.1021/jacs.8b13295)  
Goulet, Marc-Antoni; Tong, Liuchuan; Pollack, Daniel A.; Tabor, Daniel P.; Odom, Susan A.; Aspuru-Guzik, Alán; Kwan, Eugene E.; Gordon, Roy G.; Aziz, Michael J.   
Journal of American Chemistry  
**(2019)** 141:8014-8019

[Synthesis of volatile, reactive coinage metal 5,5-bicyclic amidinates with enhanced thermal stability for chemical vapor deposition](https://pubs.rsc.org/en/content/articlelanding/2019/dt/c9dt01202h#!divAbstract)  
Tong, Liuchuan; Davis, Luke M.; Gong, Xian; Feng, Jun; Beh, Eugene S.; Gordon, Roy, G.   
Dalton Transactions  
**(2019)** 48:6709–6713

[Enhancement of the open circuit voltage of Cu2O/Ga2O3 heterojunction solar cells through the mitigation of interfacial recombination](https://aip.scitation.org/doi/10.1063/1.5096283)  
Chua, Danny; Kim, Sang Bok; Gordon, Roy. G  
AIP Advances  
**(2019)** 9:055203

[A Phosphonate-Functionalized Quinone Redox Flow Battery at Near-Neutral pH with Record Capacity Retention Rate](https://onlinelibrary.wiley.com/doi/pdf/10.1002/aenm.201900039)  
Ji, Yunlong; Goulet, Marc-Antoni; Pollack, Daniel A.; Kwabi, David G.; Jin, Shijian; De Porcellinis, Diana; Kerr, Emily F.; Gordon, Roy G.; Aziz, Michael J.  
Advanced Energy Materials   
**(2019)** 9:1900039

[Vapor Deposition of Transparent, p‑Type Cuprous Iodide Via a Two-Step Conversion Process](https://pubs.acs.org/doi/10.1021/acsaem.8b01363)  
Heasley, Rachel; Davis, Luke M.; Chua, Danny; Chang, Christina M.; Gordon, Roy G.  
ACS Applied Energy Materials   
**(2018)** 1:953−6963

[Total-Ionizing-Dose Responses of GaN-Based HEMTs With Different Channel Thicknesses and MOSHEMTs With Epitaxial MgCaO as Gate Dielectric](https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=8114245)  
Bhuiyan, Maruf A., Zhou, Hong; Chang, Sung-Jae; Lou, Xiabing; Gong, Xian; Jiang, Rong; Gong, Huiqi; Zhang, En Xia; Won, Chul-Ho; Lim, Jong-Won; See, Jung-Hee; Gordon, Roy G.; Reed, Robert A.; Fleetwood, Daniel M.; Ye, Peide; Ma, Tso-Ping   
IEEE Transactions on Nuclear Science   
**(2018)** 65:46-52

[Alkaline Benzoquinone Aqueous Flow Battery for Large-Scale Storage of Electrical Energy](https://onlinelibrary-wiley-com.ezp-prod1.hul.harvard.edu/doi/epdf/10.1002/aenm.201702056)  
Yang, Zhengjin; Tong, Liuchuan; Tabor, Daniel P.; Beh, Eugene S.; Goulet, Marc-Antoni; De Porcellinis, Diana; Aspuru-Guzik, Alán; Gordon, Roy G.; Aziz, Michael J.  
Advanced Energy Materials   
**(2018)** 8:1702056

[Obtaining a Low and Wide Atomic Layer Deposition Window (150–2758C) for In2O3 Films Using an InIII Amidinate and H2OK](https://onlinelibrary.wiley.com/doi/full/10.1002/chem.201802317)  
Kim, Sang Bok; Jayaraman, Ashwin; Chua, Danny; Davis, Luke M.; Zheng, Shao-Liang; Zhao, Xizhu; Lee, Sunghwan; Gordon, Roy G.  
Chemistry A European Journal  
**(2018)** 24:9525–9529

[Flow Batteries: Alkaline Benzoquinone Aqueous Flow Battery for Large‐Scale Storage of Electrical Energy (Adv. Energy Mater. 8/2018)](https://onlinelibrary.wiley.com/doi/epdf/10.1002/aenm.201870034)  
Yang, Zhengjin; Tong, Liuchuan; Tabor, Daniel P.; Beh, Eugene S.; Goulet, Marc‐Antoni; De Porcellinis, Diana; Aspuru‐Guzik, Alán; Gordon, Roy G.; Aziz, Michael J.  
Advanced Energy Materials  
**(2018)** 8:1870034

[Alkaline Quinone Flow Battery with Long Lifetime at pH 12](https://www.cell.com/joule/fulltext/S2542-4351(18)30291-5)  
Kwabi, David G.; Lin, Kaixiang; Ji, Yunlong; Kerr, Emily F.; Goulet, Marc-Antoni; De Porcellinis, Diana; Tabor, Daniel P.; Pollack, Daniel A.; Aspuru-Guzik, Alán; Gordon, Roy G.; Aziz, Michael J.  
Joule  
**(2018)** 2:1894-1906

[Alkaline Benzoquinone Aqueous Flow Battery for Large-Scale Storage of Electrical Energy](https://faculty.chemistry.harvard.edu/files/gordon/files/yang.advenergymater.170270961-92017.pdf)  
Yang, Zhengjin; Tong, Liuchuan; Tabor, Daniel P.; Beh, Eugene S.; Goulet, Marc-Antoni; De Porcellinis, Diana; Aspuru-Guzik, Alán; Gordon, Roy G.; Aziz, Michael J.  
Advanced Energy Materials  
(**2017**) 8:1702056

[UV-Vis Spectrophotometry of Quinone Flow Battery Electrolyte for in-situ Monitoring and Improved Electrochemical Modeling of Potential and Quinhydrone Formation](https://faculty.chemistry.harvard.edu/files/gordon/files/tong.pccp_.online_1-82017.pdf)  
Tong, Liuchuan; Chen, Qing; Wong, Andrew A.; Gomez-Bombarelli, Rafael; Aspuru-Guzik, Alán; Gordon, Roy G.; Aziz, Michael J.  
Physical Chemistry Chemical Physics  
(**2017**) 19:31684-31691

[DC and RF Performance of AlGaN/GaN/SiC MOSHs with Deep Sub-Micron T-Gates and Atomic Layer Epitaxy MgCaO as Gate Dielectric](https://faculty.chemistry.harvard.edu/files/gordon/files/zhou.ieee_elecdevltr381014092017.pdf)  
Zhou, Hong; Lou, Xiabing; Sutherlin, Karyann; Summers, Jarren; Kim, Sang Bok; Chabak, Kelson D.; Gordon, Roy G.; Ye, Peide D.  
IEEE Electron Device Letters  
(**2017**) 38:1409-1412

[Measurement of contact resistivity at metal-tin sulfide (SnS) interfaces](https://faculty.chemistry.harvard.edu/files/gordon/files/yang.jap122045303.1-.52017.pdf)  
Yang, Chuanxi; Sun, Leizhi; Brandt, Riley E.; Kim, Sang Bok; Zhao, Xizhu; Feng, Jun; Buonassisi, Tonio; Gordon, Roy G.  
Journal of Applied Physics  
(**2017**) 122:045303.1-045303.5

[Enhancement-Mode AlGaN/GaN Fin-MOSHEMTs on Si Substrate With Atomic Layer Epitaxy MgCaO](https://faculty.chemistry.harvard.edu/files/gordon/files/zhou.ieee_elecdevltrs3891294-12972017.pdf)  
Zhou, Hong; Lou, Xiabing; Kim, Sang Bok; Chabak, Kelson D.; Gordon, Roy G.; Ye, Peide D.  
IEEE Electron Device Letters  
(**2017**) 38:1294-1297

[Novel phase diagram behavior and materials design in heterostructural semiconductor alloys](https://faculty.chemistry.harvard.edu/files/gordon/files/holder.scienceadvances1-72017.pdf)  
Holder, Aaron M.; Siol, Sebastian; Ndione, Paul F.; Peng, Haowei; Deml, Ann M.; Matthews, Bethany E.; Schelhas, Laura T.; Toney, Michael F.; Gordon, Roy G.; Tumas, William; Perkins, John D.; Ginley, David S.; Gorman, Brian P.; Tate, Janet; Zakuteyev, Andriy; Lany, Stephan  
Science Advances  
(**2017**) 3:1-7

[Synthesis of 5,5-Bicyclic Amidines as Ligands for Thermally Stable Vapor Deposition Precursors](https://faculty.chemistry.harvard.edu/files/gordon/files/beh.organometallics3681453-62017.pdf)  
Beh, Eugene S.; Tong, Liuchuan; Gordon, Roy G.  
Organometallics  
(**2017**) 36:1453-1456

[Pure and conformal CVD nickel and nickel monosilicide in high-aspect-ratio structures analyzed by atom probe tomography](https://faculty.chemistry.harvard.edu/files/gordon/files/li.jap121175301.1-62017.pdf)  
Li, Kecheng; Feng, Jun; Kwak, Junkeun; Yang, Jing; Gordon, Roy G.  
Journal of Applied Physics  
(**2017**) 121:175301.1-175301.6

[Quantitative Evaluation of Cobalt Disilicide/Si Interfacial Roughness](http://faculty.chemistry.harvard.edu/files/gordon/files/yang.ecs_jssst65p345-92017.pdf)  
Yang, Jing; Feng, Jun; Li, Kecheng; Bhandari, Harish B.; Li, Zhefeng; Gordon, Roy G.  
ECS Journal of Solid State Science and Technology  
(**2017**) 6:P345-P349

[Direct-Liquid-Evaporation Chemical Vapor Deposition of Nanocrystalline Cobalt Metal for Nanoscale Copper Interconnect Encapsulation](http://faculty.chemistry.harvard.edu/files/gordon/files/feng.ami_online_a-g2017.pdf)  
Feng, Jun; Gong, Xian; Lou, Xiabing; Gordon, Roy G.  
Applied Materials and Interfaces  
(**2017**) 9:10914-10920

[A Neutral pH Aqueous Organic-Organometallic Redox Flow Battery with Extremely High Capacity Retention](http://faculty.chemistry.harvard.edu/files/gordon/files/beh.acsenergylett2639-442017.pdf)  
Beh, Eugene S.; De Porcellinis, Diana; Gracia, Rebecca L.; Xia, Kay T.; Gordon, Roy G.; Aziz, Michael J.  
ACS Energy Letters  
(**2017**) 2:639-644

[Anthraquinone Derivatives in Aqueous Flow Batteries](http://faculty.chemistry.harvard.edu/files/gordon/files/gerhardt.advenergymater16014881-92017.pdf)  
Gerhardt, Michael R.; Tong, Liuchuan; Gomez-Bombarelli, Rafael; Chen, Qing; Marshak, Michael P.; Galvin, Cooper J.; Aspuru-Guzik, Alán; Gordon, Roy G.; Aziz, Michael J.  
Advanced Energy Materials  
(**2017**) 1601488:1-9

[Total Ionizing Dose (TID) Effects in GaAs MOSFETs With La-Based Epitaxial Gate Dielectrics](https://faculty.chemistry.harvard.edu/files/gordon/files/ren.ieeetransnucsci641164-92017.pdf)  
Ren, Shufeng; Bhuiyan, Maruf A.; Zhang, Jingyun; Lou, Xiabing; Si, Mengwei; Gong, Xian; Jiang, Rong; Ni, Kai; Wan, Xin; Zhang, En Xia; Gordon, Roy G.; Reed, Robert A.; Fleetwood, Daniel M.; Ye, Peide; Ma, T.P.  
IEEE Transactions on Nuclear Science  
(**2017**) 64:164-169

[Comparison of Capacity Retention Rates During Cycling of Quinone-Bromide Flow Batteries](https://faculty.chemistry.harvard.edu/files/gordon/files/gerhardt.mrsadv28431-82017.pdf)  
Gerhardt, Michael R.; Beh, Eugene S.; Tong, Liuchuan; Gordon, Roy G.; Aziz, Michael J.  
MRS Advances  
(**2017**) 2:431-438

[Vapor Deposition of Copper-Manganese Interconnects](http://faculty.chemistry.harvard.edu/files/gordon/files/feng.2016ieeeintlintercontechconf177-92016.pdf)  
Feng, Jun; Li, Kecheng; Gong, Xian; Gordon, Roy G.  
IEEE International Interconnect Technology Conference / Advanced Metallization Conference (IITC/AMC)  
(**2016**) 177-179

[Synthetic and Spectroscopic Study of the Mechanism of Atomic Layer Deposition of Tin Dioxide](http://faculty.chemistry.harvard.edu/files/gordon/files/weimer.organometallics351202-82016.pdf)  
Weimer, Matthew S.; Hu, Bo; Kraft, Steven J.; Gordon, Roy G.; Segre, Carlo U.; Hock, Adam S.  
Organometallics  
(**2016**) 35:1202-1208

[High-performance InAIN/GaN MOSHEMTs enabled by atomic layer epitaxy MgCaO as gate dielectric](https://faculty.chemistry.harvard.edu/files/gordon/files/zhou.ieeeelecdevlett375556-5592016.pdf)  
Zhou, Hong; Lou, Xiabing; Conrad, Nathan J.; Si, Mengwei; Wu, Heng; Alghamdi, Sami; Guo, Shiping; Gordon, Roy G.; Ye, Peide D.  
IEEE Electron Device Letters  
(**2016**) 37(5):556-559

[Epitaxial Growth of MgxCa1-xO on GaN by Atomic Layer Deposition](http://faculty.chemistry.harvard.edu/files/gordon/files/lou.nanolett167650-42016.pdf)  
Lou, Xiabing; Zhou, Hong; Kim, Sang Bok; Alghamdi, Sami; Gong, Xian; Feng, Jun; Wang, Xinwei; Ye, Peide D.; Gordon, Roy G.  
Nano Letters  
(**2016**) 16:7650-7654

[Vapor deposition of copper(I) bromide films via a two-step conversion process](http://faculty.chemistry.harvard.edu/files/gordon/files/heasley.jvacscitecha351b109.1-.62016.pdf)  
Heasley, Rachel; Chang, Christina M.; Davis, Luke M.; Liu, Kathy; Gordon, Roy G.  
Journal of Vacuum Science and Technology A  
(**2016**) 35:01B109.1-01B109.6

[A Two-Step Absorber Deposition Approach To Overcome Shunt Losses in Thin-Film Solar Cells: Using Tin Sulfide as a Proof-of-Concept Material System](http://faculty.chemistry.harvard.edu/files/gordon/files/steinmann.appmaterinterface8.5.2016.pdf)  
Steinmann, Vera; Chakraborty, Rupak; Rekemeyer, Paul H.; Hartman, Katy; Brandt, Riley E.; Polizzotti, Alex; Yang, Chuanxi; Moriarty, Tom; Gradecak, Silvija; Gordon, Roy G.; Buonassisi, Tonio  
Applied Materials and Interfaces  
(**2016**) WebA-G

[Synthesis of Calcium(II) Amidinate Precursors for Atomic Layer Deposition through a Redox Reaction between Calcium and Amidines](http://faculty.chemistry.harvard.edu/files/gordon/files/kim.angewandtechemieint5510228-332016.pdf)  
Kim, Sang Bok; Yang, Chuanxi; Powers, Tamara; Davis, Luke M.; Lou, Xiabing; Gordon, Roy G.  
Angewandte Chemie International Edition  
(**2016**) 55:10228-10233

[A redox-flow battery with an alloxazine-based organic electrolyte](http://faculty.chemistry.harvard.edu/files/gordon/files/lin.natureenergy161021-87.2016.pdf)  
Lin, Kaixiang; Gomez-Bombarelli, Rafael; Beh, Eugene S.; Tong, Liuchuan; Chen, Qing; Valle, Alvaro; Aspuru-Guzik, Alán; Aziz, Michael J.; Gordon, Roy G.  
Nature Energy  
(**2016**) 1-8

[The impact of sodium contamination in tin sulfide thin-film solar cells](http://faculty.chemistry.harvard.edu/files/gordon/files/steinmann.saplmater4p026103.1-72016.pdf?m=1456845614)  
Steinmann, Vera; Brandt, Riley E.; Chakraborty, Rupak; Jaramillo, R.; Young, Matthew; Ofori-Okai, Benjamin K.; Yang, Chuanxi; Polizzotti, Alex; Nelson, Keith A.; Gordon, Roy G.; Buonassisi, Tonio  
APL Materials  
(**2016**) 4:026103.1-026103.7

[Transient terahertz photoconductivity measurements of minority-carrier lifetime in tin sulfide thin films: Advanced metrology for an early stage photovoltaic material](http://scitation.aip.org/content/aip/journal/jap/119/3/10.1063/1.4940157)  
Jaramillo, R.; Sher, Meng-Ju; Ofori-Okai, Benjamin K.; Steinmann, V.; Yang, Chuanxi; Hartman, Katy; Nelson, Keith A.; Lindenberg, Aaron M.; Gordon, Roy G.; Buonassisi, T.  
Journal of Applied Physics  
(**2016**) 119:035101.1-035101.16

[InAIN/GaN MOSHEMTs with High Drain Current of 2.3 A/mm High On/Off Ratio of 1012 and Low SS of 64 mV/dec Enabled by Atomic-Layer-Epitaxial MgCaO as Gate Dielectric](http://faculty.chemistry.harvard.edu/files/gordon/files/mgcao-algan-gan-si-sisc-2015_2.pdf?m=1457532044)  
Zhou, Hong; Lou, Xiabing; Wu, Heng; Alghamdi, Sami; Guo, Shiping; Gordon, R.G.; Ye, Peide D.  
Device Research Conference  
(**2015**) 1-2

[AlGaN/GaN MOSHEMT on Si Substrate with High on/off Ratio and High Off-state Breakdown Voltage Enabled by Atomic Layer Epitaxial MgCaO as Gate Dielectric](http://faculty.chemistry.harvard.edu/files/gordon/files/mgcao-algan-gan-si-sisc-2015_1.pdf?m=1457532281)  
Zhou, Hong; Lou, Xiabing; Chabak, Kelson D.; Gordon, R.G.; Ye, Peide D.  
46th IEEE International Electron Devices Meeting  
(**2015**) 1-3

[InGaAs 3D MOSFETs with Drastically Different Shapes Formed by Anisotropic Wet Etching](http://faculty.chemistry.harvard.edu/files/gordon/files/iedm2015_iii-v_wet_etching_final.pdf?m=1457532478)  
Zhang, J.; Si, M.; Lou, X.B.; Wu, W.; Gordon, R.G.; Ye, P.D.  
IEEE International Electron Devices Meeting  
(**2015**) 1-4

[Evaluating performance limiting defects in novel thin-film materials for solar cells](http://faculty.chemistry.harvard.edu/files/gordon/files/limiting_defects_mrs_slides.pdf?m=1457532722)  
Steinmann, V.; Chakraborty, R.; Polizzotti, A.; Akin, A.; Hartman, K.; Mangan, N.M.; Gordon, R.G.; Buonassisi, T.  
Materials Research Society Conference Session NN: Thin-Film and Nanostructure Solar Cell Materials and Devices for Next-Generation Photovoltaics  
(**2015**) 1-13

[Selective manganese deposition for Cu\_low k nano device interconnect](http://faculty.chemistry.harvard.edu/files/gordon/files/nguyen_ald_2015_selective_mn_deposition_f.pdf?m=1457533177)  
Nguyen, Son V.; Vo, T.; Priyadarshini, D.; Haigh Jr., T.; Nogami, T.; Cohen, S.; Flaitz, P.; Lin, Y.; Shobha, H.; Grill, A.; Canaperi, D.; Gordon, Roy  
Proceedings of the AVS Atomic Layer Deposition Conference  
(**2015**) 1

[Atomic layer deposited Indium oxy-sulfide on CZT(S,Se) absorbers](http://faculty.chemistry.harvard.edu/files/gordon/files/in2os3_mrs_spring_2015-final.pdf?m=1457533505)  
Jayaraman, Ashwin; Kim, Sang Bok; Gordon, Roy G.; Gershon, Talia; Lee, Yun Song; Gunawan, Oki; Haight, Richard  
Materials Research Society Conference  
(**2015**) 1-12

[High-performance Aqueous Redox Flow Battery (ARFB)](http://faculty.chemistry.harvard.edu/files/gordon/files/2015_acs_conference_aqueous_flow_battery.pdf?m=1457533714)  
Lin, Kaixiang; Chen, Qing; Eisenach, Louise; Valle, Alvaro; Gordon, Roy G.; Aziz, Michael J.; Marshak, Michael P.  
American Chemical Society Conference  
(**2015**) 1-13

[ALD of Manganese Silicate](http://faculty.chemistry.harvard.edu/files/gordon/files/ald_of_manganese_silicate.pdf?m=1457533879)  
Gordon, Roy G.; Sun, Lu; Chen, Qiang; Park, Jin-Seong; Kim, Sang Bok  
Proceedings of the AVS Atomic Layer Deposition Conference  
(**2015**) 1-20

[Advanced Atomic Layer Deposition and Epitaxy Processes](http://faculty.chemistry.harvard.edu/files/gordon/files/vlsi-tsa_2015_roy_gordon.pdf?m=1457534057)  
Gordon, Roy G.  
International Symposium on VLSI Technology, Systems and Applications  
(**2015**) 1-43

[Selective Vapor Deposition](http://faculty.chemistry.harvard.edu/files/gordon/files/selective_depositions.pdf?m=1457534174)  
Gordon, Roy G.  
AVS 62nd International Symposium and Exhibition  
(**2015**) 1-46

[Non-monotonic effect of growth temperature on carrier collection in SnS solar cells](http://scitation.aip.org/content/aip/journal/apl/106/20/10.1063/1.4921326)  
Chakraborty, R.; Steinmann, V.; Mangan, N.M.; Brandt, R.E.; Poindexter, J.R.; Jaramillo, R.; Mailoa, J.P.; Hartman, K.; Polizzotti, A.; Yang, C.; Gordon, R.G.; Buonassisi, T.  
Applied Physics Letters  
(**2015**) 106:203901.1-203906.5

[Dopant Activation in Sn-doped Ga2O3 investigated by X-ray absorption spectroscopy](http://faculty.chemistry.harvard.edu/files/gordon/files/dopant_activation.apl10725p252103.1-52015.pdf?m=1458835113)  
Siah, S.C.; Brandt, R.E.; Lim, K.; Schelhas, L.T.; Jaramillo, R.; Heinemann, M.D.; Chua, D.; Wright, J.; Perkins, J.D.; Segre, C.U.; Gordon, R.G.; Toney, M.F.; Buonassisi, T.  
Applied Physics Letters  
(**2015**) 107:252103.1-252103.5

[Front and Back Contact Modification as a Route to Increasing Open Circuit Voltage in CZTS,Se Devices](http://faculty.chemistry.harvard.edu/files/gordon/files/haight_mrs_spring2015_talk.pdf?m=1458754837)  
Haight, Richard; Lee, Yun S.; Ek, Bruce; Gershon, Talia; Gunawan, Oki; Gordon, Roy; Jayaraman, Ashwin; Sardashti, Kasra; Kummel, Andrew; Gokmen, Ravin Mankad Tayfun; McCandless, Brian; Bishop, Doug; Lloyd, Mike; Chua, Danny; Vogel, Michael; Chagarov, Evgueny  
Materials Research Society Conference  
(**2015**) 1-32

[Voc impact of orientation-dependent *X* in anisotropic PV absorbers](http://faculty.chemistry.harvard.edu/files/gordon/files/chakraborty_2015_fall_mrs_oral.pdf?m=1458755232)  
Chakraborty, Rupak; Needleman, David Berney; Doolittle, Kelsey; Mangan, Niall M.; Steinmann, Vera; Poindexter, Jeremy R.; Polizzotti, Alex; Yang, Chuanxi; Gordon, Roy G.; Buonassisi, Tonio  
Materials Research Society Conference  
(**2015**) 1-16

[Effect of growth temperature on carrier collection in SnS-based solar cells](http://faculty.chemistry.harvard.edu/files/gordon/files/chakraborty_2015_spring_mrs.pdf?m=1458755519)  
Chakraborty, Rupak; Steinmann, Vera; Poindexter, Jeremy R.; Jaramillo, Rafael; Hartman, Katy; Polizzotti, Alex; Brandt, Riley E.; Mangan, Niall; Yang, Chuanxi; Gordon, Roy G.; Buonassisi, Tonio  
Materials Research Society Conference Symposium B: Thin Film Compound Semiconductor Photovoltaics  
(**2015**) 1

[Bromine-free quinone flow battery chemistries](http://faculty.chemistry.harvard.edu/files/gordon/files/bromine_free_quinone_acs_2015.pdf?m=1458755905)  
Marshak, Michael P.; Aziz, Michael J.; Gordon, Roy G.  
American Chemical Society Meeting  
(**2015**) 1-46

[Direct-Liquid-Evaporation Chemical Vapor Deposition of Smooth, Highly Conformal Cobalt and Cobalt Nitride Thin Films](http://faculty.chemistry.harvard.edu/files/gordon/files/yang_cobalt_jmc_c_2015.pdf?m=1448031595)  
Yang, Jing; Li, Kecheng; Feng, Jun; Gordon, Roy G.  
Journal of Materials Chemistry C  
(**2015**) 3:12098-12106

[Alkaline quinone flow battery](http://faculty.chemistry.harvard.edu/files/gordon/files/dash_alkaline_quinone_flow_battery_science34962552015-11.6.2015.pdf?m=1448031209)  
Lin, Kaixiang; Chen, Qing; Gerhardt, Michael R.; Tong, Liuchuan; Kim, Sang Bok; Eisenach, Louise; Valle, Alvaro W.; Hardee, David; Gordon, Roy G.; Aziz, Michael J.; Marshak, Michael P.  
Science  
(**2015**) 349:1529-1532

[Framework to predict optimal buffer layer pairing for thin film solar cell absorbers: A case study for tin sulfide/zinc oxysulfide](http://faculty.chemistry.harvard.edu/files/gordon/files/framework_absorbers.jap1181151022015.pdf?m=1444243342)  
Mangan, Niall M.; Brandt, Riley E.; Steinmann, Vera; Jaramillo, R.; Yang, Chuanxi; Poindexter, Jeremy R.; Chakraborty, Rupak; Park, Helen Hejin; Zhao, Xizhu; Gordon, Roy G.; Buonassisi, Tonio  
Journal of Applied Physics  
(**2015**) 118:115102.1-115102.9

[Making Record-efficiency SnS Solar Cells by Thermal Evaporation and Atomic Layer Deposition](https://www.jove.com/video/52705/making-record-efficiency-sns-solar-cells-thermal-evaporation-atomic)  
Jaramillo, Rafael; Steinmann, Vera; Yang, Chuanxi; Hartman, Katy; Chakraborty, Rupak; Poindexter, Jeremy R.; Castillo, Mariela Lizet; Gordon, Roy; Buonassisi, Tonio  
(**2015**) 99:1-20

[Inversion-mode GaAs wave-shaped field-effect transistor on GaAs (100) substrate](http://faculty.chemistry.harvard.edu/files/gordon/files/apl_wavefet_jingyun_2015.pdf)  
Zhang, Jingyun; Lou, Xiabing; Si, Mengwei; Wu, Heng; Shao, Jiayi; Manfra, Michael J.; Gordon, Roy G.; Ye, Leide D.  
Applied Physics Letters  
(**2015**) 106:073506.1-073506.4

[Quinone electrochemistry in acidic and alkaline solutions and its application in large-scale energy storage](http://faculty.chemistry.harvard.edu/files/gordon/files/quinone_electrochem_acs_2015.pdf?m=1458827080)  
Gerhardt, Michael R.; Chen, Qing; Lin, Kaixiang; Marshak, Michael P.; Tong, Liuchuan; Galvin, Cooper; Gordon, Roy G.; Aziz, Michael J.  
250th American Chemical Society Meeting  
(**2015**) 1-62

[Dissecting the Quinone Bromide Flow Battery](http://faculty.chemistry.harvard.edu/files/gordon/files/qingchen_ecs_2015_.pdf?m=1458827373)  
Chen, Qing; Gerhardt, Michael R.; Eisenach, Louise; Marshak, Michael P.; Gordon, Roy G.; Aziz, Michael J.  
Electrochemical Society Meeting  
(**2015**) 1-16

[Band offsets of n-type electron-selective contacts on cuprous oxide (Cu2O) for photovoltaics](http://faculty.chemistry.harvard.edu/files/gordon/files/brandt_apl_2015.pdf)  
Brandt, Riley E.; Young, Matthew; Park, Helen Hejin; Dameron, Arrelaine; Chua, Danny; Lee, Yun Seog; Teeter, Glenn; Gordon, Roy G.; Buonassisi, Tonio  
Applied Physics Letters  
(**2014**) 105:263901.1-263901.5

[Torque magnetometry of an amorphus-alumina/strontium-titanate interface](http://faculty.chemistry.harvard.edu/files/gordon/files/torque_magnetometry.physrevb902011132014.pdf)  
Tomarken, S.L.; Young, A.F.; Lee, S.W.; Gordon, R.G.; Ashoori, R.C.  
Physical Review B  
(**2014**) 90:201113.1-201113.4

[Atomic layer deposition of Al-incorporated Zn(O,S) thin films with tunable electrical properties](http://faculty.chemistry.harvard.edu/files/gordon/files/ald.ai_.appphysltr1052021012014.pdf)  
Park, Helen Hejin; Jayaraman, Ashwin; Heasley, Rachel; Yang, Chuanxi; Hartle, Lauren; Mankad, Ravin; Haight, Richard; Mitzi, David B.; Gunawan, Oki; Gordon, Roy G.  
Applied Physics Letters  
(**2014**) 105:202101.1-202101.4

[Synthesis of N-Heterocyclic Stannylene (Sn(II)) and Germylene (Ge(II)) and a Sn(II) Amidinate and Their Application as Precursors for Atomic Layer Deposition](http://faculty.chemistry.harvard.edu/files/gordon/files/stannylene_germylene_chem_mater_2014.pdf)  
Kim, Sang Bok; Sinsermsuksakul, Prasert; Hock, Adam S.; Pike, Robert D.; Gordon, Roy G.  
Chemistry of Materials  
(**2014**) 26:3065-3073

[Why don't we have inexpensive PV systems made from Earth-abundant elements?](https://faculty.chemistry.harvard.edu/files/gordon/files/gordon.why_inexpensive_pv_syst.acsnatlmtg.8.2014pres-72014.pdf)  
Gordon, Roy G.  
248th ACS National Meeting and Exposition, San Francisco, CA 8.10-14.2014  
(**2014**) PRES-7

[Improved Cu2O-Based Solar Cells Using Atomic Layer Deposition to Control the Cu Oxidation State at the p-n Junction](http://faculty.chemistry.harvard.edu/files/gordon/files/adv_energy_mater_2014_lee.pdf)  
Lee, Sang Woon; Lee, Yun Seog; Heo, Jaeyeong; Siah, Sin Cheng; Chua, Danny; Brandt, Riley E.; Kim, Sang Bok; Mailoa, Jonathan P.; Buonassisi, Tonio; Gordon, Roy G.  
Advanced Energy Materials  
(**2014**) 1301916:1-7

[Co-optimization of SnS absorber and Zn(O,S) buffer materials for improved solar cells](https://onlinelibrary.wiley.com/doi/full/10.1002/pip.2504)  
Park, Helen Hejin; Heasley, Rachel; Sun, Leizhi; Steinmann, Vera; Jaramillo, Rafael; Hartman, Katy; Chakraborty, Rupak; Sinsermsuksakul, Prasert; Chua, Danny; Buonassisi, Tonio; Gordon, Roy G.  
Progress in Photovoltaics: Research and Applications  
(**2014**) 23:901-908

[A metal-free organic-inorganic aqueous flow battery](/file_url/279)  
Huskinson, Brian; Marshak, Michael P.; Suh, Changwon; Er, Suleyman; Gerhardt, Michael R.; Galvin, Cooper J.; Chen, Xudong; Aspuru-Guzik, Alán; Gordon, Roy G.; Aziz, Michael J.  
Nature  
(**2014**) 505:195-198

[3.88% Efficient Tin Sulfide Solar Cells using Congruent Thermal Evaporation](http://faculty.chemistry.harvard.edu/files/gordon/files/steinmann_advmater8.2014.pdf)  
Steinmann, Vera; Jaramillo, R.; Hartman, Katy; Chakraborty, Rupak; Brandt, Riley E.; Poindexter, Jeremy R.; Lee, Yun Seog; Sun, Leizhi; Polizzotti, Alexander; Park, Helen Hejin; Gordon, Roy G.; Buonassisi, Tonio  
Advanced Materials  
(**2014**) 1-5

[Overcoming Efficiency Limitations of SnS-Based Solar Cells](http://faculty.chemistry.harvard.edu/files/gordon/files/prasertadvenergymater2014.pdf)  
Sinsermsuksakul, Prasert; Sun, Leizhi; Lee, Sang Woon; Park, Helen Hejin; Kim, Sang Bok; Yang, Chuanxi; Gordon, Roy G.  
Advanced Energy Materials  
(**2014**) 1-7

[X-ray absorption spectroscopy elucidates the impact of structural disorder on electron mobility in amorphous zinc-tin-oxide thin films](http://faculty.chemistry.harvard.edu/files/gordon/files/siahappphysltr2014.pdf)  
Siah, Sin Cheng; Lee, Sang Woon; Lee, Yun Seog; Heo, Jaeyeong; Shibata, Tomohiro; Segre, Carlo U.; Gordon, Roy G.; Buonassisi, Tonio  
Applied Physics Letters  
(**2014**) 104:242113.1-242113.5

[Atomic Layer Deposited Gallium Oxide Buffer Layer Enables 1.2 V Open-Circuit Voltage in Cuprous Oxide Solar Cells](http://faculty.chemistry.harvard.edu/files/gordon/files/leeadvmater2014.pdf)  
Lee, Yun Seog; Chua, Danny; Brandt, Riley E.; Siah, Sin Cheng; Li, Jian V.; Mailoa, Jonathan P.; Lee, Sang Woon; Gordon, Roy G.; Buonassisi, Tonio  
Advanced Materials  
(**2014**) 26:4704-4710

[Nitrogen-doped cuprous oxide as a p-type hole-transporting layer in thin-film solar cells](http://faculty.chemistry.harvard.edu/files/gordon/files/cuprous_oxide_jmaterchem115416-222013_0.pdf)  
Lee, Yun Seog; Heo, Jaeyeong; Winkler, Mark T.; Siah, Sin Cheng; Kim, Sang Bok; Gordon, Roy G.; Buonassisi, Tonio  
Journal of Materials Chemistry A  
(**2013**) 1:15416-15422

[Ultrathin amorphous zinc-tin-oxide buffer layer for enhancing heterojunction interface quality in metal-oxide solar cells](http://faculty.chemistry.harvard.edu/files/gordon/files/zinc-tin-oxide_buffer_energyenvironsci62112_2013_0.pdf)  
Lee, Yun Seog; Heo, Jaeyeong; Siah, Sin Cheng; Mailoa, Jonathan P.; Brandt, Riley E.; Kim, Sang Bok; Gordon, Roy G.; Buonassisi, Tonio  
Energy and Environmental Science  
(**2013**) 6:2112-2118

[Band Alignment of SnS/Zn(O,S) heterojunctions in SnS thin film solar cells](/files/gordon/files/band_alignment_apl_2013.pdf)  
Sun, Leizhi; Haight, Richard; Sinsermsuksakul, Prasert; Kim, Sang Bok; Park, Helen H.; Gordon, Roy G.  
Applied Physics Letters  
(**2013**) 103:181904/1-181904/5

[Origin of the self-limited electron densities at Al2O3/SrTiO3 heterostructures grown by atomic layer deposition - oxygen diffusion model](/file_url/276)  
Lee, Sang Woon; Heo, Jaeyeong; Gordon, Roy G.  
Nanoscale  
(**2013**) 8940-8944

[Variability Improvement by Interface Passivation and EOT Scaling of InGaAs Nanowire MOSFETs](/file_url/263)  
Gu, Jiangjiang G.; Wang, Xinwei; Wu, Heng; Gordon, Roy G.; Ye, Peide D.  
IEEE Electron Device Letters  
(**2013**) 34:608-610

[Atomic Layer Deposition of Zn(O,S) Thin Films with Tunable Electrical Properties by Oxygen Annealing](/file_url/145)  
Park, Helen Hejin; Heasley, Rachel; Gordon, Roy G.   
Applied Physics Letters  
(**2013**) 102:132110/1-132110/5

[GaAs Enhancement-Mode NMOSFETs Enabled by Atomic Layer Epitaxial La1.8Y0.2O3 as Dielectric](/file_url/126)  
Dong, L.; Wang, X.W.; Zhang, J.Y.; Li, X.F.; Gordon, R.G.; Ye, P.D.   
IEEE Electron Device Letters  
(**2013**) 34:487-489

[Effects of forming gas anneal on ultrathin InGaAs nano wire metal-oxide-semiconductor field-effect transistors](/files/gordon/files/sns_solar_cell_band-offset_engg.apl102p0539012013.pdf)  
Si, Mengwei; Gu, Jiangjiang J.; Wang, Xinwei; Shao, Jiayi; Li, Xuefei; Manfra, Michael J.; Gordon, Roy G.; Ye, Peide D.   
Applied Physics Letters  
(**2013**) 102:093505/1-093505/4

[High-Quality Epitaxy of Ruthenium Dioxide, RuO2, on Rutile Titanium Dioxide, TiO2, by Pulsed Chemical Vapor Deposition](http://faculty.chemistry.harvard.edu/files/gordon/files/wangcrystalgrowthanddesign2013.pdf)  
Wang, Xinwei; Gordon, Roy G.  
Crystal Growth and Design  
(**2013**) 13:1316-1321

[Heteroepitaxy of La2O3 and La2-xYxO3 on GaAs (111)A by Atomic Layer Deposition: Achieving Low Interface Trap Density](/file_url/127)  
Wang, Xinwei; Dong, Lin; Zhang, Jingyun; Liu, Yiqun; Ye, Peide D.; Gordon, Roy G.  
Nano Letters  
(**2013**) 13:594-599

[Enhancing the efficiency of SnS solar cells via band-offset engineering with a zinc oxysulfide buffer layer](/file_url/128)  
Sinsermsuksakul, Prasert; Hartman, Katy; Kim, Sang Bok; Heo, Jaeyeong; Sun, Leizhi; Park, Helen Hejin; Chakraborty, Rupak; Buonassisi, Tonio; Gordon, Roy G.   
Applied Physics Letters  
(**2013**) 102:053901/1-053901/5

[Smooth, Low-Resistance, Pinhole-Free, Conformal Ruthenium Films by Pulsed Chemical Vapor Deposition](/file_url/129)  
Wang, Xinwei; Gordon, Roy G  
ECS Journal of Solid State Science and Technology  
(**2013**) 2:N41-N44

[Formation of Cobalt Disilicide on 3D Structures from Highly Conformal Cobalt Nitride Thin Films by Low-temperature Chemical Vapor Deposition from a Liquid Cobalt Amidinate Precursor](http://faculty.chemistry.harvard.edu/files/gordon/files/jing_cosix_poster_mrs_2012.pdf)  
Yang, Jing; Bhandari, Harish B.; Gordon, Roy G.; Wang, Qing Min; Lehn, Jean-Sebastien M.; Lu, Huazhi; Shenai, Deo  
Proceedings of the 2012 Materials Research Society Meeting and Exhibit  
(**2012**)

[Chemical Vapor Deposition of Cobalt Nitride and Its Application as an Adhesion-enhancing Layer for Advanced Copper Interconnects](http://faculty.chemistry.harvard.edu/files/gordon/files/jing_con_mrs_2012_talk.pdf)  
Yang, Jing; Bhandari, Harish B.; Gordon, Roy G.; Wang, Qing Min; Lehn, Jean-Sebastien M.; Li, Huazhi; Shenai, Deo  
Proceedings of the 2012 Materials Research Society Meeting and Exhibit  
(**2012**)

[Antimony-Doped Tin(II) Sulfide Thin Films](/file_url/146)  
Sinsermsuksakul, Prasert; Chakraborty, Rupak; Kim, Sang Bok; Heald, Steven M.; Buonassisi, Tonio; Gordon, Roy G.  
Chemistry of Materials  
(**2012**) 24:4556-4562

[Size-dependent Transport Study of In0.53Ga0.47As Gate-All-Around Nanowire MOSFETs: Impact of Quantum Confinement and Volume Inversion](http://faculty.chemistry.harvard.edu/files/gordon/files/gu_2012_ieee_electron_device_letters_2013_33_967-969.pdf)  
Gu, Jiangjiang J.; Wu, Heng; Liu, Yiqun; Neal, Adam T.; Gordon, Roy G.; Ye, Peide D.  
IEEE Electron Device Letters  
(**2012**) 33:967-969

[Thermal chemistry of copper(I)-N,N'-di-*sec*-butylacetamidinate on Cu(110) single-crystal surfaces](http://faculty.chemistry.harvard.edu/files/gordon/files/ma_jvactech30a114-01.102012.pdf)  
Ma, Qiang; Zaera, Francisco; Gordon Roy G.  
Journal of Vacuum Science and Technology A Vacuum Surfaces and Films  
(**2012**) 30:01A114.1-01A114.10

[Atomic Layer Disposition of Sc2O3 for passivating AlGaN/GaN high electron mobility transistor devices](/file_url/130)  
Wang, Xinwei; Saadat, Omair I.; Xi, Bin; Lou, Xiabing; Molnar, Richard J.; Palacios, Tomas; Gordon, Roy G.  
Applied Physics Letters  
(**2012**) 101:232109/1-232109/4

[III-V 4D Transistors](/file_url/131)  
Gu, J.J.; Wang, X.W.; Shao, J.; Neal, A.T.; Manfra, M.J.; Gordon, R.G.; Ye, P.D.  
IEEE Device Research Conference  
(**2012**) 1-2

[Glass-Encapsulated Light Harvesters: More Efficient Dye-Sensitized Solar Cells by Deposition of Self-Aligned, Conformal, and Self-Limited Silica Layers](/file_url/132)  
Son, Ho-Jin; Wang, Xinwei; Prasittichai, Chaiya; Jeong, Nak Cheon; Aaltonen, Titta; Gordon, Roy G.; Hupp, Joseph T.  
Journal of the American Chemical Society  
(**2012**) 134:9537-9540

[Chemical Vapor Deposition of Cobalt Nitride and its Application as an Adhesion-Enhancing Layer for Advanced Copper Interconnects](/file_url/133)  
Bhandari, Harish B.; Yang, Jing; Kim, Hoon; Lin, Youbo; Gordon, Roy G.; Wang, Qing Min; Lehn, Jean-Sebastien M.; Li, Huazhi; Shenai, Deo  
ECS Journal of Solid State Science and Technology  
(**2012**) 1:N79-N84

[Atomic layer deposited zinc tin oxide channel for amorphous oxide thin film transistors](/file_url/134)  
Heo, Jaeyeong; Kim, Sang Bok; Gordon, Roy G.  
Applied Physics Letters  
(**2012**) 101:113507/1-113507/5

[Creation and Control of Two-Dimensional Electron Gas Using Al-Based Amorphous Oxides/SrTiO3 Heterostructures Grown by Atomic Layer Deposition](/file_url/147)  
Lee, Sang Woon; Liu, Yiqun; Heo, Jaeyeong; Gordon, Roy G.  
Nano Letters  
(**2012**) 12:4775-4783

[Frequency response of LaAlO3/SrTiO3 all-oxide field-effect transistors](/file_url/135)  
Liu, Qingmin; Dong, Lin; Liu, Yiqun; Gordon, Roy; Ye, Peide D.; Fay, Patrick; Seabaugh, Alan  
Solid-State Electronics  
(**2012**) 76:1-4

[Synthesis of vanadium dioxide thin films on conducting oxides and metal-insulator transition characteristics](/file_url/148)  
Cui, Yanjie; Wang, Xinwei; Zhou, You; Gordon, Roy; Ramanathan, Shriram  
Journal of Crystal Growth  
(**2012**) 338:96-102

[Vapor Deposition of Highly Conformal Copper Seed Layers for Plating Through-Silicon Vias (TSVs)](/file_url/136)  
Au, Yeung; Wang, Qing Min; Li, Huazhi; Lehn, Jean-Sebastien M.; Shenai, Deo V.; Gordon, Roy G.  
Journal of The Electrochemical Society  
(**2012**) 159:D382-D385

[Atomic layer deposition of tin oxide with nitric oxide as an oxidant gas](/file_url/137)  
Heo, Jaeyeong; Kim, Sang Bok; Gordon, Roy G.  
Journal of Materials Chemistry  
(**2012**) 22:4599-4602

[Atomic Layer Deposition of Tin Monosulfide Thin Films](/file_url/138)  
Sinsermsuksakul, Prasert; Heo, Jaeyeong; Noh, Wontae; Hock, Adam S.; Gordon, Roy G.  
Advanced Energy Materials  
(**2011**) 1:1116-1125

[Impact of ultrathin Al2O3 barrier layer on electrical properties of LaLuO3 metal-oxide-semiconductor devices](/file_url/139)  
Liu, Yiqun; Shen, Shaoping; Brillson, Leonard J.; Gordon, Roy G.  
Applied Physics Letters  
(**2011**) 98:122907/1-122907/3

[Impact of ultrathin Al2O3 diffusion barriers on defects in high-*k* LaLuO3 on Si](/file_url/140)  
Shen, S.; Liu, Y.; Gordon, R.G.; Brillson, L.J.  
Applied Physics Letters  
(**2011**) 98:172902/1-172902/3

[(Sn,Al)Ox Films Grown by Atomic Layer Deposition](/file_url/149)  
Heo, Jaeyeong; Liu, Yiqun; Sinsermsuksakul, Prasert; Li, Zhefeng; Sun, Leizhi; Noh, Wontae; Gordon, Roy G.  
Journal of Physical Chemistry C  
(**2011**) 115:10277-10283

[Filling Narrow Trenches by Iodine-Catalyzed CVD of Copper and Manganese on Manganese Nitride Barrier/Adhesion Layers](/file_url/141)  
Au, Yeong; Lin, Youbo; Gordon, Roy G.  
Journal of The Electrochemical Society  
(**2011**) 158:D248-D253

[First Experimental Demonstration of Gate-all-around III-V MOSFETs by Top-down Approach](/file_url/142)  
Gu, J.J.; Liu, Y.Q.; Wu, Y.Q.; Colby, R.; Gordon, R.G.; Ye, P.D.  
International Electron Device Meeting  
(**2011**) 11:769-772

[Three dimensional solid-state supercapacitors from aligned single-walled carbon nanotube array templates ](/file_url/150)  
Pint, Cary L.; Nicholas, Nolan W.; Xu, Sheng; Sun, Zhengzong; Tour, James M.; Schmidt, Howard K.; Gordon, Roy G.; Hauge, Robert H.  
Carbon  
(**2011**) 49:4890-4897

[Surface Chemistry of Copper(I) Acetaminidates in Connection with Atomic Layer Deposition (ALD) Processes ](/file_url/143)  
Ma, Qiang; Guo, Hansheng; Gordon, Roy G.; Zaera, Francisco   
Chemistry of Materials  
(**2011**) 23:3325-3334

[Investigation of Thermal Stability and Delivery of Cobalt Amidinates and Novel Cobalt Formamidinates for Metallic Cobalt by ALD/CVD](/file_url/144)  
Wang, Qing Min; Lehn, Jean-Sebastien; Li, Huazhi; Shenai, Deo; Yang, Jing; Gordon, Roy G.  
Proceedings of the AVS Atomic Layer Deposition Conference  
(**2011**) 1

[Atomic Layer Deposition and Chemical Vapor Deposition of Tin(II) Sulfide](/file_url/151)  
Sinsermsuksakul, Prasert; Heo, Jaeyeong; Gordon, Roy G.  
Proceedings of the AVS Atomic Layer Deposition Conference  
(**2011**) 1-14

[Surface Chemistry of Copper Precursors in Connection with Atomic Layer Deposition (ALD) Processes](/file_url/152)  
Ma, Qiang; Gordon, Roy G.; Zaera, Francisco  
Proceedings of the AVS Atomic Lay Deposition Conference  
(**2011**) 1-13

[Atomic layer epitaxy of rare earth oxide films on GaAs(111)A and their device properties](/file_url/153)  
Liu, Yiqun; Xu, Min; Heo, Jaeyeong; Ye, Peide D.; Gordon, Roy G.  
Proceedings of the AVS Atomic Layer Deposition Conference  
(**2011**) 1-18

[New Ni Amidinate Source for ALD/CVD of NiNx, NiO and NiSi](/file_url/154)  
Li, Huazhi; Perera, Thiloma; Shenai, Deo V.; Li, Zhefeng; Gordon, Roy G.  
Proceedings of the AVS Atomic Layer Deposition Conference  
(**2011**) 1-12

[Novel Volatile Precursors of Palladium for ALD and CVD](/file_url/155)  
Lehn, Jean-Sebastien M.; Shenai, Deo V.; Wang, Qing Min; Gordon, Roy G.  
Proceedings of the AVS Atomic Layer Deposition Conference  
(**2011**) 1

[(Sn,Al)Ox Films Grown by Atomic Layer Deposition](/file_url/156)  
Heo, Jaeyeong; Liu, Yiqun; Sinsermsuksakul, Prasert; Li, Zhefeng; Sun, Leizhi; Noh, Wontae; Gordon, Roy G.  
Proceedings of the AVS Atomic Layer Deposition Conference  
(**2011**) 1-14

[Introduction to ALD Precursors and Reaction Mechanisms](/file_url/157)  
Gordon, Roy G.  
Proceedings of the AVS Atomic Layer Deposition Conference  
(**2011**) 1-67

[Atomic Layer Deposition (ALD) and Chemical Vapor Deposition (CVD) of Copper-Based Metallization for Microelectronic Fabrication](/file_url/158)  
Au, Yeung; Lin, Youbo; Kim, Hoon; Li, Zhengwen; Gordon, Roy G.  
Proceedings of the AVS Atomic Layer Deposition Conference  
(**2011**) 1-19

[ALD and Pulsed CVD of Ruthenium and Ruthenium Dioxide Thin Films from an Amidinate Precursor](http://faculty.chemistry.harvard.edu/files/gordon/files/ru_poster_ald_2011.pdf)  
Wang, Xinwei; Wang, Hongtao; Gordon, Roy G.  
Proceedings of the AVS Atomic Layer Deposition Conference  
(**2011**) 1

[Atomic-layer-deposited LaAlO3/SrTiO3 all oxide field-effect transistors](/file_url/159)  
Dong, L.; Liu, Y.Q.; Xu, M.; Wu, Y.Q.; Colby, R.; Stach, E.A.; Droopad, R.; Gordon, R.G.; Ye, P.D.  
Proceedings of the 2010 International Electron Device Meeting  
(**2010**) 10/588-10/591

[Heteroepitaxy of single-crystal LaLuO3 on GaAs(111)A by atomic layer deposition](/file_url/160)  
Liu, Yiqun; Xu, Min; Heo, Jaeyeong; Ye, Peide D.; Gordon, Roy G.  
Applied Physics Letters  
(**2010**) 97:162910/1-162910/3

[Low Temperature Epitaxial Growth of High Permittivity Rutile TiO2 on SnO2](/file_url/161)  
Wang, Hong-Tao; Xu, Sheng; Gordon, Roy G.  
Electrochemical and Solid-State Letters  
(**2010**) 13:G75-G78

[Uptake of Copper Acetamidinate ALD Precursors on Nickel Surfaces](/file_url/162)  
Ma, Qiang; Guo, Han-Sheng; Gordon, Roy G.; Zaera, Francisco  
Chemistry of Materials  
(**2010**) 22:352-359

[Direct-Liquid-Injection Chemical Vapor Deposition of Nickel Nitride Films and Their Reduction to Nickel Films](/file_url/163)  
Li, Zhefeng; Gordon, Roy G.; Pallem, Venkateswara; Li, Huazhi; Shenai, Deo V.  
Chemistry of Materials  
(**2010**) 22:3060-3066

[Formation of Nickel Silicide from Direct-Liquid-Injection Chemical-Vapor-Deposited Nickel Nitride Films](/file_url/164)  
Li, Zhefeng; Gordon, Roy G.; Li, Huazhi; Shenai, Deo V.; Lavoie, Christian  
Journal of The Electrochemical Society  
(**2010**) 157:H679-H683

[Raman Characterization and Polarity Tuning of Aligned Single-walled Carbon Nanotubes on Quartz](/file_url/165)  
Lei, Bo; Ryu, Koungmin; De-Arco, Lewis Gomez; Han, Song; Badmaev, Alexander; Farmer, Damon; Kim, Kevin; Gordon, Roy G.; Wang, Kang L.; Zhou, Chongwu  
Japanese Journal of Applied Physics  
(**2010**) 48:02BC02/1-02BC02/5

[Low Temperature Atomic Layer Deposition of Tin Oxide](/file_url/166)  
Heo, Jaeyeong; Hock, Adam; Gordon, Roy G.  
Chemistry of Materials  
(**2010**) 22:4964-4973

[Low Temperature Atomic Layer Deposition of Tin Dioxide, SnO2](/file_url/167)  
Heo, Jaeyeong; Hock, Adam S.; Gordon, Roy G.  
Proceedings of the AVS Atomic Layer Deposition Conference  
(**2010**) 1-18

[First-Principles Simulations of Conditions of Enhanced Adhesion Between Copper and TaN(111) Surfaces Using a Variety of Metallic Glue Materials](/file_url/168)  
Han, Bo; Wu, Jinping; Zhou, Chenggang; Chen, Bei; Gordon, Roy G.; Lei, Xinjian; Roberts, David A.; Cheng, Hansong  
Angewandte Chemie, International Edition  
(**2010**) 49:148-152

[High performance atomic-layer-deposited LaLuO3/Ge-on-insulator p-channel metal-oxide-semiconductor field-effect transistor with thermally grown GeO2 as interfacial passivation layer](/file_url/169)  
Gu, J. J.; Liu, Y. Q.; Xu, M.; Celler, G. K.; Gordon, R. G.; Ye, P. D.  
Applied Physics Letters  
(**2010**) 97:012106/1-012106/3

[Surface and Interface Processes during Atomic Layer Deposition of Copper on Silicon Oxide](/file_url/170)  
Dai, Min; Kwon, Jinhee; Halls, Mathew D.; Gordon, Roy G.; Chabal, Yves J.  
Langmuir  
(**2010**) 26:3911-3917

[Selective Chemical Vapor Deposition of Manganese Self-Aligned Capping Layer for Cu Interconnections in Microelectronics](/file_url/171)  
Au, Yeung; Lin, Youbo; Kim, Hoon; Beh, Eugene; Liu, Yiqun; Gordon, Roy G.  
Journal of The Electrochemical Society  
(**2010**) 157:D341-D345

[Atomic Layer Deposition of Lanthanum-Based Ternary Oxides](/file_url/172)  
Wang, Hongtao; Wang, Jun-Jieh; Gordon, Roy G.; Lehn, Jean-Sebastien M.; Li, Huazhi; Hong, Daewon; Shenai, Deo V.  
Electrochemical and Solid-State Letters  
(**2009**) 12:G13-G15

[Atomic Layer Deposition of Ruthenium Thin Films from an Amidinate Precursor](/file_url/173)  
Wang, Hongtao; Gordon, Roy G.; Alvis, Roger; Ulfig, Robert M.  
Chemical Vapor Deposition  
(**2009**) 15:312-319

[FTIR study of copper agglomeration during atomic layer deposition of copper](/file_url/175)  
Dai, Min; Kwon, Jinhee; Chabal, Yves J.; Halls, Mathew D.; Gordon, Roy G.  
Materials Research Society Symposium Proceedings (CMOS Gate-Stack Scaling)  
(**2009**) 1155:1155-C11-06

[In Situ Infrared Characterization during Atomic Layer Deposition of Lanthanum Oxide](/file_url/176)  
Kwon, Jinhee; Dai, Min; Halls, Mathew D.; Langereis, Erik; Chabal, Yves J.; Gordon, Roy G.  
Journal of Physical Chemistry C  
(**2009**) 113:654-660

[On the Relative Stability of Cobalt- and Nickel-Based Amidinate Complexes Against Beta-Migration](/file_url/177)  
Li, Jiaye; Wu, Jinping; Zhou, Chenggang; Han, Bo; Lei, Xinjian; Gordon, Roy G.; Cheng, Hansong   
International Journal of Quantum Chemistry  
(**2009**) 109:756-763

[Chemical Vapor Deposition (CVD) of Manganese Self-Aligned Diffusion Barriers for Cu Interconnections in Microelectronics](http://faculty.chemistry.harvard.edu/files/gordon/files/mn_self-align_barrier_advmetconf_321-9_2009.pdf)  
Gordon, Roy G.; Kim, Hoon; Au, Yeung; Wang, Hongtao; Bhandari, Harish B.; Liu, Yiqun; Lee, Don K.; Lin, Youbo  
Advanced Metallization Conference Proceedings  
(**2009**) 321-329

[ALD high-*k* and higher-*k* integration on GaAs](http://faculty.chemistry.harvard.edu/files/gordon/files/ald_high-k_gaas_avs.ald_2009.pdf)  
Koybasi, Ozhan; Xu, Min; Liu, Yiqun; Wang, Jun-Jieh; Gordon, Roy G.; Ye, Peide D.  
Proceedings of the AVS Atomic Layer Deposition Conference  
(**2009**) 1-16

[ALD and CVD Ni using Ni Amidinate Precursor](http://faculty.chemistry.harvard.edu/files/gordon/files/ald.cvd_ni_avs.ald_2009.pdf)  
Li, Huazhi; Shenai, Deo V.; Li, Zhefeng; Gordon, Roy G.  
Proceedings of the AVS Atomic Layer Deposition Conference  
(**2009**) 1-13

[Surface Chemistry of Copper Amidinates on Metal Surfaces](http://faculty.chemistry.harvard.edu/files/gordon/files/surface_chem_copper_on_metal_avs.ald_2009.pdf)  
Ma, Qiang; Lee, Ilkeun; Guo, Hansheng; Gordon, Roy G.; Zaera, Francisco  
Proceedings of the AVS Atomic Layer Deposition Conference  
(**2009**) 1-17

[Atomic Layer Deposition and Characterization of MgO from Magnesium Bis(Di-secbutylacetamidinate) and Water](http://faculty.chemistry.harvard.edu/files/gordon/files/ald_mggo_avs.ald_2009.pdf)  
de Rouffignac, P.; Sullivan, N.; Beaulieu, D.; Park, J.-S.; Hock, A.; Gordon, R.G.  
Proceedings of the AVS Atomic Layer Deposition Conference  
(**2009**) 1

[ALD of Tin Monosulfide, SnS](http://faculty.chemistry.harvard.edu/files/gordon/files/ald_of_tin_monosulfide.pdf)  
Sinsermsuksakul, Prasert; Hock, Adam S.; Gordon, Roy G.  
Proceedings of the AVS Atomic Layer Deposition Conference  
(**2009**) 1-17

[Externally Assembled Gate-All-Around Carbon Nanotube Field-Effect Transistor](/file_url/178)  
Chen, Zhihong; Farmer, Damon; Xu, Sheng; Gordon, Roy G.; Avouris, Phaedon; Appenzeller, Joerg  
IEEE Electron Device Letter  
(**2008**) 29:183-185

[Ab Initio Molecular Dynamics Simulation on the Aggregation of a Cu Monolayer on a WN(001) Surface](/files/gordon/files/jphyschem_c_0.pdf)  
Han, Bo; Wu, Jinping; Zhou, Chenggang; Li, Jiaye; Lei, Xinjian; Norman, John A. T.; Gaffney, Thomas R.; Gordon, Roy G.; Roberts, David A.; Cheng, Hansong  
Journal of Physical Chemistry C   
(**2008**) 112:9798-9802

[Ultrathin CVD Cu Seed Layer Formation Using Copper Oxynitride Deposition and Room Temperature Remote Hydrogen Plasma Reduction](/file_url/179)  
Kim, Hoon; Bhandari, Harish B.; Xu, Sheng; Gordon, Roy G.  
Journal of The Electrochemical Society  
(**2008**) 155:H496-H503

[Effects of Low Temperature O2 Treatment on the Electrical Properties of Amorphous LaAlO3 Films Made by Atomic Layer Deposition](/file_url/180)  
Liu, Y.; Kim, H.; Wang, J.-J.; Li, H.; Gordon, R. G.   
ECS Transactions  
(**2008**) 16:471-478

[Synthesis and characterization of volatile liquid cobalt amidinates](/file_url/181)  
Li, Zhengwen; Lee, Don Kuen; Coulter, Michael; Rodriguez, Leonard N. J.; Gordon, Roy G.  
Dalton Transactions  
(**2008**) 19:2592-2597

[Mechanisms of Atomic Layer Deposition on Substrates with Ultrahigh Aspect Ratios](/file_url/182)  
Kucheyev, S. O.; Biener, J.; Baumann, T.F.; Wang, Y.M.; Hamza, A. V.; Li, Z.; Lee, D.K.; Gordon, R. G.  
Langmuir  
(**2008**) 24:943-948

[Synthesis and Characterization of Ruthenium Amidinate Complexes as Precursors for Vapor Deposition](/file_url/183)  
Li, Huazhi; Aaltonen, Titta; Li, Zhengwen; Lim, Booyong S.; Gordon, Roy G.  
The Open Inorganic Chemistry Journal  
(**2008**) 2:11-17

[Design for Precursors for ALD](/file_url/184)  
Lehn, Jean-Sebastien; Li, Huazhi; Wang, Qing Min; Shenai, Deo V.; Gordon, Roy G.  
Proceedings of the AVS Atomic Layer Deposition Conference  
(**2008**) 1-20

[Designing Suitable Metal Amidinate Sources for TiN and Ba/Sr-containing Thin Films](/file_url/185)  
Lehn, Jean-Sebstien; Wang, Qing Min; Hong, Daewon; Shenai, Deo; Wang, Hongtao; Gordon, Roy G.  
Proceedings of the AVS Atomic Layer Deposition Conference  
(**2008**) 1-14

[Oxide-encapsulated vertical germanium nanowire structures and their DC transport properties](/file_url/186)  
Leu, Paul W.; Adhikari, Hemant; Koto, Makoto; Kim, Kyoung-Ha; de Rouffignac, Philippe; Marshall, Ann F.; Gordon, Roy G.; Chidsey, Christopher E. D.; McIntyre, Paul C.  
Nanotechnology  
(**2008**) 19:485705/1-485705/9

[ALD of High-*k* LaErO3 and LaYO3 Using Metal Amidinate Sources](http://faculty.chemistry.harvard.edu/files/gordon/files/ald_high-k_metal_avs.ald_2008.pdf)  
Li, Huazhi; Hong, Daewon; Shenai, Deo V.; Liu, Yiqun; Gordon, Roy G.  
Proceedings of the AVS Atomic Layer Deposition Conference  
(**2008**) 1-13

[Step Coverage by ALD Films: Theory and Examples of Ideal and Non-Ideal Reactions](http://faculty.chemistry.harvard.edu/files/gordon/files/step_coverage_by_ald_avs.ald_2008.pdf)  
Gordon, Roy G.  
Proceedings of the AVS Atomic Layer Deposition Conference  
(**2008**) 1-52

[Vapor Deposition of Ruthenium from an Amidinate Precursor](/file_url/187)  
Li, Huazhi; Farmer, Damon B.; Gordon, Roy G.; Lin, Youbo; Vlassak, Joost  
Journal of The Electrochemical Society  
(**2007**)154:D642-D647

[Density Function Theory Study of Copper Agglomeration on the WN(001) Surface](/files/gordon/files/j.physchemc.pdf)  
Wu, Jinping; Han, Bo; Zhou, Chenggang; Lei, Xinjian; Gaffney, Thomas R.; Norman, John A. T.; Li, Zhengwen; Gordon, Roy G.; Cheng, Hansong  
Journal of Physical Chemistry C  
(**2007**) 111:9403-9406

[Synthesis and Sublimination Kinetics of a Highly Volatile Asymmetric Iron(II) Amidinate](/file_url/188)  
Li, Xin-Gui; Li, Zhengwen; Li, Huazhi; Gordon, Roy G.  
European Journal of Inorganic Chemistry  
(**2007**) 8:1135-1142

[High density RU nanocrystal deposition for nonvolatile memory applications](/file_url/189)  
Farmer, Damon B.; Gordon, Roy G.  
Journal of Applied Physics  
(**2007**) 101:124503/1-124503/5

[*In-situ* FTIR Study of Atomic Layer Deposition (ALD) of Copper Metal Films](/file_url/190)  
Dai, Min; Kwon, Jinhee; Langereis, Erik; Wielunski, Leszek; Chabal, Yves J.; Li, Zhengwen; Gordon, Roy G.  
ECS Transactions  
(**2007**) 11:91-101

[Atmospheric pressure chemical vapor deposition of transparent conducting films of fluorine doped zinc oxide and their application to amorphous silicon solar cells](/file_url/191)  
Liang, Haifan; Gordon, Roy G.  
Journal of Materials Science  
(**2007**) 42:6388-6399

[Atomic layer deposition of insulating nitride interfacial layers for germanium metal oxide semiconductor field effect transistors with high-κ oxide/tungsten nitride gate stacks](/file_url/192)  
Kim, Kyoung H.; Gordon, Roy G.; Ritenour, Andrew; Antoniadis, Dimitri A.  
Applied Physics Letters   
(**2007**) 90:212104/1-212104/3

[Computational Study on the Relative Reactivities of Cobalt and Nickel Amidinates via Beta-H Migration](/file_url/193)  
Wu, Jinping; Li, Jiaye; Zhou, Chenggang; Lei, Xinjian; Gaffney, Thomas; Norman, John A.T.; Li, Zhengwen; Gordon, Roy G.; Cheng, Hansong  
Organometallics  
(**2007**) 26:2803-2805

[New Precursors for ALD of High-*k* Dielectrics](http://faculty.chemistry.harvard.edu/files/gordon/files/new_precursors.avs_.ald1-252007.pdf)  
Gordon, Roy G.; Lehn, Jean-Sebastien; Liu, Yiqun; Kim, Kyoung H.; Li, Zhengwen; Couler, Michael; Li, Huazhi; Pugh, Ralph; Shenai, Deo  
Proceedings of the AVS Atomic Layer Deposition Conference  
(**2007**) 1-25

[Nucleation mechanisms of atomic layer deposition of lanthanum oxide on Si](http://faculty.chemistry.harvard.edu/files/gordon/files/nucleationmechanisms.avs_.ad1-162007.pdf)  
Kwon, Jinhee; Dai, Min; Langereis, Erik; Wielunski, Leszek; Chabal, Yves J.; Kim, Kyoung-Ha; Gordon, Roy G.  
Proceedings of the AVS Atomic Layer Deposition Conference  
(**2007**) 1-16

[Designing Suitable ALD Precursors for High-*k* Dielectrics, Barriers and Metal Applications](http://faculty.chemistry.harvard.edu/files/gordon/files/suitablealdprecursors.avs_.ald1-212007.pdf)  
Shenai, Deo V.; Li, Huazhi; Wang, QingMin; Senzaki, Yoshi; Gordon, Roy G.  
Proceedings of the AVS Atomic Layer Deposition Conference  
(**2007**) 1-21

[Atomic Layer Deposition of Ultrathin Copper Metal Films from a Liquid Copper(I)Amidinate Precursor](/file_url/194)  
Li, Zhengwen; Rahtu, Antti; Gordon, Roy G.  
Journal of The Electrochemical Society  
(**2006**) 153:C787-C794

[Atomic layer deposition of gadolinium scandate films with high dielectric constant and low leakage current](/file_url/195)  
Kim, Kyoung H.; Farmer, Damon B.; Lehn, Jean-Sebastien M.; Rao, P. Venkateswara; Gordon, Roy G.  
Applied Physics Letters   
(**2006**) 89:133512/1-133512/3

[Thin, Continuous, and Conformal Copper Films by Reduction of Atomic Layer Deposited Copper Nitride](/file_url/196)  
Li, Zhengwen; Gordon, Roy G.  
Chemical Vapor Deposition  
(**2006**) 12:435-441

[ALD of Scandium Oxide from Scandium Tris(N,N'-diisopropylacetamidinate) and Water](/file_url/197)  
de Rouffignac, Philippe; Yousef, Andrew P.; Kim, Kyoung H.; Gordon, Roy G.  
Electrochemical Solid-State Letters  
(**2006**) 9:F45-F48

[Atomic Layer Deposition of Praseodymium Aluminum Oxide for Electrical Applications](/file_url/198)  
de Rouffignac, Philippe; Gordon, Roy G.  
Chemical Vapor Deposition  
(**2006**) 12:152-157

[Atomic Layer Deposition on Suspended Single-Walled Carbon Nanotubes via Gas-Phase Noncovalent Functionalization](/file_url/199)  
Farmer, Damon; Gordon, Roy G.  
Nano Letters  
(**2006**) 6:699-703

[Choice of ALD Precursors for Microelectronics and Nanoelectronics](http://faculty.chemistry.harvard.edu/files/gordon/files/micro.nanoelectronics.avs_.ald1-392006.pdf)  
Gordon, Roy G.  
Proceedings of the AVS Atomic Layer Deposition Conference  
(**2006**) 1-39

[Atomic Layer Deposition of Y2O3 Thin Films from Yttrium Tris(N,N'-diisopropylacetamidinate) and Water](/file_url/200)  
de Rouffignac, Philippe; Park, Jin-Seong; Gordon, Roy G.  
Chemistry of Materials  
(**2005**) 17:4808-4814

[Tantalum(V) Nitride Inverse Opals as Photonic Structures for Visible Wavelengths](/file_url/201)  
Rugge, Alessandro; Park, Jin-Seong; Gordon, Roy G.; Tolbert, Sarah H.  
Journal of Physical Chemistry B   
(**2005**) 109:3764-3771

[Self-Aligned 40 nm Channel Carbon Nanotube Field-Effect Transistors with Subthreshold Swings Down to 70mV/decade](/file_url/202)  
Javey, Ali; Farmer, Damon; Gordon, Roy G.; Dai, Hongjie  
Proceedings of SPIE-The International Society for Optical Engineering (Quantum Sensing and Nanophotonic Devices II, Invited Paper)  
(**2005**) 5732:14-18

[Nucleation and Adhesion of ALD Copper on Cobalt Adhesion Layers and Tungsten Nitride Diffusion Barriers](/file_url/203)  
Li, Zhengwen; Gordon, Roy G.; Farmer, Damon B.; Lin, Youbo; Vlassak, Joost  
Electrochemical and Solid-State Letters  
(**2005**) 8:G182-G185

[ALD of Hafnium Oxide Thin Films from Tetrakis(ethylmethylamino)hafnium and Ozone](/file_url/204)  
Liu, Xinye; Ramanathan, Sasangan; Longdergan, Ana; Srivastava, Anuranjan; Lee, Eddie; Seidel, Thomas E.; Barton, Jeffrey T.; Pang, Dawen; Gordon, Roy G.  
Journal of The Electrochemical Society  
(**2005**) 152:G213-G219

[Precursors for Atomic Layer Deposition of High-κ Dielectrics](/file_url/205)  
Musgrave, Charles B.; Gordon, Roy G.  
Future Fab International, Process Gases, Chemicals and Materials  
(**2005**) 18:126-128

[ALD of High-κ dielectrics on Suspended Functionalized SWNTs](/file_url/206)  
Farmer, Damon; Gordon, Roy G.  
Electrochemical and Solid-State Letters  
(**2005**) 8:G89-G91

[Synthesis and Characterization of Copper(I) Amidinates as Precursors for Atomic Layer Deposition (ALD) of Copper Metal](/file_url/207)  
Li, Zhengwen; Barry, Sean T.; Gordon, Roy G.  
Inorganic Chemistry  
(**2005**) 44:1728-1735

[High Performance n-Type Carbon Nanotube Field-Effect Transistors with Chemically Doped Contacts](/file_url/208)  
Javey, Ali; Tu, Ryan; Farmer, Damon B.; Guo, Jing; Gordon, Roy G.; Dai, Hongjie  
Nano Letters  
(**2005**) 5:345-348

[ALD process for the preparation of noble-metal-free monolithic catalysts](/file_url/209)  
Bahlawane, Naoufal; Kohse-Hoeinghaus, Katharina; Park, Jin-Seong; Gordon, Roy G.  
Electrochemical Society Proceedings  
(**2005**) EUROCVD-15:583-590

[Atomic Layer Deposition of Copper and Copper Nitride Thin Films from Cu(I) Amidinate Precursors](http://faculty.chemistry.harvard.edu/files/gordon/files/ald_copper_avs.ald_1-172005.pdf)  
Li, Zhengwen; Gordon, Roy G.  
Proceedings of the AVS Atomic Layer Deposition Conference  
(**2005**) 1-17

[ALD of Ruthenium Metal Films Using an Amidinate Precursor Under Reducing Conditions](http://faculty.chemistry.harvard.edu/files/gordon/files/ru_precursors.filmavs.ald1-162005_0.pdf)  
Lu, Huazhi; Li, Zhengwen; Gordon, Roy G.; Farmer, Damon  
Proceedings of the AVS Atomic Layer Deposition Conference  
(**2005**) 1-16

[Precursors with Metal-Nitrogen Bonds for ALD of Metals, Nitrides and Oxides](http://faculty.chemistry.harvard.edu/files/gordon/files/metal-nitrogen.avs_.ald1-392005.pdf)  
Gordon, Roy G.  
Proceedings of the AVS Atomic Layer Deposition Conference  
(**2005**) 1-32

[ALD of Scandium Oxide from Tris(N,N'-diisopropyladetamidinate)Scandium and Water](http://faculty.chemistry.harvard.edu/files/gordon/files/ald_scandium_avs.ald1-162005.pdf)  
de Rouffignac, Philippe P.; Gordon, Roy G.  
Proceedings of the AVS Atomic Layer Deposition Conference  
(**2005**) 1-16

[Determination of energy barrier profiles for high-κ dielectric materials utilizing bias-dependent internal photoemission](/file_url/210)  
Brewer, Julie Casperson; Walters, Robert J.; Bell, L. Douglas; Farmer, Damon B.; Gordon, Roy G.; Atwater, Harry A.  
Applied Physics Letters  
(**2004**) 85:4133-4135

[Sealing Porous Low-κ Dielectrics with Silica](/file_url/211)  
de Rouffignac, Philippe; Li, Zhengwen; Gordon, Roy G.  
Electrochemical and Solid-State Letters  
(**2004**) 7:G306-G308

[Improved fill factors in amorphous silicon solar cells on zinc oxide by insertion of a germanium layer to block impurity incorporation](/file_url/212)  
Ganguly, G.; Carlson, D.E.; Hegedus, S.S.; Ryan, D.; Gordon, R.G.; Pang, D.; Reedy, R.C.  
Applied Physics Letters  
(**2004**) 85:479-481

[Atomic Layer Deposition of Insulating Hafnium and Zirconium Nitrides](/file_url/213)  
Becker, Jill S.; Kim, Esther; Gordon, Roy G.  
Chemistry of Materials  
(**2004**) 16:3497-3501

[Surface Chemistry and Electrical Properties of Germanium Nanowires](/files/gordon/files/germanium_nanowires.pdf)  
Wang, Dunwei; Chang, Ying-Lan; Wang, Qian; Cao, Jien; Farmer, Damon B.; Gordon, Roy G.; Dai, Hongjie  
Journal of the American Chemical Society   
(**2004**) 126:11602-11611

[Self-Aligned Ballistic Molecular Transistors and Electrically Parallel Nanotube Arrays](/file_url/214)  
Javey, Ali; Guo, Jing; Farmer, Damon B.; Wang, Qian; Yenilmez, Erhan; Gordon, Roy G.; Lundstrom, Mark; Dai, Hongjie  
Nano Letters  
(**2004**) 4:1319-1322

[Atomic Layer Deposition to Fine-Tune the Surface Properties and Diameters of Fabricated Nanopores](/file_url/215)  
Chen, Peng; Mitsui, Toshiyuki; Farmer, Damon B.; Golovchenko, Jene; Gordon, Roy G.; Branton, Daniel  
Nano Letters  
(**2004**) 4:1333-1337

[Atomic layer deposition of lanthanum aluminum oxide nano-laminates for electrical applications](/file_url/216)  
Lim, Booyong S.; Rahtu, Antti; de Rouffignac, Philippe; Gordon, Roy G.  
Applied Physics Letters  
(**2004**) 84:3957-3959

[Analysis of the crystal structures of 1,3-di-*tert*-butyl-2,3-dihydro-1*H*-1,3,2-diazasilol-2-ylidene and 1,3-di-*tert*-butyl-2,2-dichloro-1,3-diaza-2-sila-4-cyclopentene](/file_url/217)  
Becker, J. S.; Staples, R. J.; Gordon, R. G.  
Crystal Research and Technology   
(**2004**) 39:85-88

[Carbon Nanotube Field-Effect Transistors with Integrated Ohmic Contacts and High-κ Gate Dielectrics](/file_url/218)  
Javey, Ali; Guo, Jing; Farmer, Damon B.; Wang, Qian; Wang, Dunwei; Gordon, Roy G.; Lundstrom, Mark; Dai, Hongjie  
Nano Letters  
(**2004**) 4:447-450

[Review of Recent Progress in Atomic Layer Deposition (ALD) of Materials for Micro- and Nano-electronics](/file_url/219)  
Gordon, Roy G.  
Polymeric Materials: Science and Technology Reprints  
(**2004**) 90:726-728

[An ALD Solution for Copper Barrier/Seed Layers on Porous Low-*k* Dielectrics](http://faculty.chemistry.harvard.edu/files/gordon/files/ald_cu_barrier.seed_layers.avs_.ald1-192004.pdf)  
Gordon, Roy G.; de Rouffignac, Philippe; Li, Zhengwen  
Proceedings of the AVS Atomic Layer Deposition Conference  
(**2004**) 1-19

[Atomic layer deposition of transition metals](/file_url/220)  
Lim, Booyong S.; Rahtu, Antti; Gordon, Roy G.  
Nature Materials  
(**2003**) 2:749-754

[Synthesis and Characterization of Volatile, Thermally Stable, Reactive Transition Metal Amidinates](/file_url/221)  
Lim, Booyong S.; Rahtu, Antti; Park, Jin-Seong; Gordon, Roy G.  
Inorganic Chemistry  
(**2003**) 42:7951-7958

[Low-temperature atomic-layer-deposition lift-off method for microelectronic and nanoelectronic applications](/file_url/222)  
Biercuk, M. J.: Monsma, D. J.; Marcus, C.M.; Becker, J.S.; Gordon, R.G.  
Applied Physics Letters  
(**2003**) 83:2405-2407

[Tungsten Nitride Inverse Opals by Atomic Layer Deposition](/file_url/223)  
Rugge, Alessandro; Becker, Jill S.; Gordon, Roy G.; Tolbert, Sarah H.  
Nano Letters  
(**2003**) 3:1293-1297

[Highly conformal atomic layer deposition of tantalum oxide using alkylamide precursors](/file_url/224)  
Hausmann, Dennis M.; de Rouffignac, Philippe; Smith, Amethyst; Gordon, Roy G.; Monsma, Douwe  
Thin Solid Films  
(**2003**) 443:1-4

[Highly Conformal Thin Films of Tungsten Nitride Prepared by Atomic Layer Deposition from a Novel Precursor](/file_url/225)  
Becker, Jill S.; Suh, Seigi; Gordon, Roy G.  
Chemistry of Materials  
(**2003**) 15:2969-2976

[Diffusion barrier properties of tungsten nitride films grown by atomic layer deposition from bis*(tert*-butylimido)bis(dimethylamido) tungsten and ammonia](/files/gordon/files/aldwn.pdf)  
Becker, Jill S.; Gordon, Roy G.  
Applied Physics Letters  
(**2003**) 82:2239-2241

[A Kinetic Model for Step Coverage by Atomic Layer Deposition in Narrow Holes or Trenches](/file_url/226)  
Gordon, Roy G.; Hausmann, Dennis M.: Kim, Esther; Shepard, Joseph  
Chemical Vapor Deposition  
(**2003**) 9:73-78

[Surface morphology and crystallinity control in the atomic layer deposition (ALD) of hafnium and zirconium oxide thin films](/file_url/227)  
Hausmann, Dennis; Gordon, Roy G  
Journal of Crystal Growth  
(**2003**) 249:251-261

[Technological Challenges for Transparent Conductors](/file_url/228)  
Gordon, Roy G.  
Advances in Science and Technology (10th International Ceramics Congress, 2002, Part D)  
(**2003**) 33:1037-1050

[Characteristics of tungsten carbide films prepared by plasma-assisted ALD using bis(tert-butylimido)bis(dimethylamido)tungsten](/file_url/229)  
Kim, Do-Heyoung; Kim, Young Jae; Song, Yo Soon; Lee, Byung-Teak; Kim, Jin Hyeok; Suh, Seigi; Gordon, Roy G.  
Journal of The Electrochemical Society  
(**2003**) 150:C740-C744

[Rapid Vapor Deposition of Highly Conformal Silica Nanolaminates](/file_url/230)  
Hausmann, Dennis; Becker, Jill; Wang, Shenglong; Gordon, Roy G.  
Science  
(**2002**) 298:402-406

[Atomic Layer Deposition of Hafnium and Zirconium Oxides Using Metal Amide Precursors](/file_url/231)  
Hausmann, Dennis M.; Kim, Esther; Becker, Jill; Gordon, Roy G.  
Chemistry of Materials  
(**2002**) 14:4350-4358

[Vapor Deposition of Metal Oxides and Silicates: Possible Gate Insulators for Future Microelectronics](/file_url/232)  
Gordon, Roy G.; Becker, Jill; Hausmann, Dennis; Suh, Seigi  
Chemistry of Materials  
(**2001**) 13:2463 - 2464

[Atmospheric pressure chemical vapor deposition of electrochromic tungsten oxide films](/file_url/233)  
Gordon, Roy G.; Barry, Sean ; Barton, Jeffrey T.; Broomhall-Dillard, Randy N.R.  
Thin Solid Films  
(**2001**) 392:231-235

[Automatic control of stoichiometry in CVD of metal silicates by alternating surface reactions](/file_url/234)  
Gordon, Roy G.  
Electrochemical Society Proceedings (Fundamental Gas-phase and Surface Chemistry of Vapor-phase Deposition II)  
(**2001**) 2001-13:136-143

[Alternating layer chemical vapor deposition (ALD) of metal silicates and oxides for gate insulators](/file_url/235)  
Gordon, Roy G.; Becker, Jill; Hausmann, Dennis; Suh, Seigi  
Materials Research Society Symposium Proceedings (Gate Stack and Silicide Issues in Silicon Processing II)  
(**2001**) 670:K2.4.1-K2.4.6

[Volatile liquid precursors for the chemical vapor deposition (CVD) of thin films containing tungsten](/file_url/236)  
Gordon, Roy G.; Barry, Sean; Broomhall-Dillard, Randy N.R.; Wagner, Valerie A.; Wang, Ying  
Materials Research Society Symposium Proceedings (Materials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics)  
(**2001**) 612:D9.12/1-D9.12/6

[Criteria for Choosing Transparent Conductors](/file_url/237)  
Gordon, Roy G.  
Materials Research Society Bulletin  
(**2000**) 25:52-57

[Synthesis and Solution Decomposition Kinetics of Flash-vaporizable Liquid Barium Beta-diketonates](/file_url/238)  
Gordon, Roy G.; Barry, Sean; Broomhall-Dillard, Randy N.R.; Teff, Daniel J.  
Advanced Materials for Optics and Electronics  
(**2000**) 10:201-211

[New Liquid Precursors for CVD of Metal-containing Materials](/file_url/239)  
Gordon, Roy G.  
Electrochemical Society Proceedings  
(**2000**) 2000-13:248-259

[Volatile liquid precursors for the chemical vapor deposition (CVD) of thin films containing alkali metals](/file_url/240)  
Broomhall-Dillard, Randy N.R.; Gordon, Roy G.; Wagner, Valerie A.  
Materials Research Society Symposium Proceedings (Chemical Processing of Dielectrics, Insulators and Electronic Ceramics)  
(**2000**) 606:139-145

[Monomeric chelated amides of aluminum and gallium: volatile, miscible liquid precursors for CVD](/file_url/241)  
Barry, Sean T.; Gordon, Roy G.; Wagner, Valerie A.  
Materials Research Society Symposium Proceedings (Chemical Processing of Dielectrics, Insulators and Electronic Ceramics)  
(**2000**) 606:83-89

[Improved conformality of CVD titanium nitride films](/file_url/242)  
Liu, Xinye; Lu, Yuan Z.; Gordon, Roy G.  
Materials Research Society Symposium Proceedings (Properties and Processing of Vapor-deposited Coatings)  
(**1999**) 555:135-140

[Highly conformal diffusion barriers of amorphous niobium nitride](/file_url/243)  
Gordon, R.G.; Liu, X.; Broomhall-Dillard, R.N.R.; Shi, Y.  
Materials Research Society Symposium Proceedings (Advanced Interconnects and Contacts)  
(**1999**) 564:335-340

[Liquid compounds for CVD of alkaline earth metals](/file_url/244)  
Gordon, Roy G.; Barry, Sean T.; Liu, Xinye; Teff, Daniel J.  
Materials Research Society Symposium Proceedings (Multicomponent Oxide Films for Electronics)  
(**1999**) 574:23-30

[Synthesis and decomposition kinetics of liquid precursors for chemical vapor deposition (CVD) of barium](/file_url/245)  
Gordon, Roy G.; Barry, Sean T.; Broomhall-Dillard, Randy N.R.; DiCeglie, Nicholas Jr.; Liu, Xinye; Teff, Daniel J.  
Electrochemical Society Proceedings (Fundamental Gas-phase and Surface Chemistry of Vapor-phase Materials Synthesis)  
(**1999**) 98-23:270-279

[New liquid precursors for chemical vapor deposition](/file_url/246)  
Gordon, Roy G.; Chen, Feng; Diceglie, Nicholas J. Jr.; Kenigsberg, Amos; Liu, Xinye; Teff, Daniel J.; Thornton, John  
Materials Research Society Symposium Proceedings (Chemical Aspects of Electronic Ceramics Processing)  
(**1998**) 495:63-68

[Calculation of Mineral Properties with the Electron Gas Model](/file_url/247)  
Gordon, Roy G.; Lacks, Daniel J.  
Molecular Engineering  
(**1997**) 6:61-79

[Chemical vapor deposition and properties of amorphous aluminum oxide films](/file_url/248)  
Gordon, Roy G.; Kramer, Keith; Liu, Xinye  
Materials Research Society Symposium Proceedings (Amorphous and Crystalline Insulating Thin Films)  
(**1997**) 446:383-388

[Deposition of Transparent Conducting Oxides for Solar Cells](/file_url/249)  
Gordon, Roy G.  
American Institute of Physics Conference Proceedings  
(**1997**) 394:39-48

[Chemical vapor deposition of coatings on glass](/file_url/250)  
Gordon, Roy G.  
Journal of Non-Crystalline Solids  
(**1997**) 218:81-91

[Atmospheric pressure chemical vapor deposition of TiN from tetrakis(dimethylamino) titanium and ammonia](/file_url/251)  
Musher, Joshua N.; Gordon, Roy G.  
Journal of Materials Research  
(**1996**) 11:989-1001

[Atmospheric Pressure Chemical Vapor Deposition of Titanium Nitride of Tetrakis (diethylamido) Titanium and Ammonia](/file_url/252)  
Musher, Joshua N.; Gordon, Roy G.  
Journal of The Electrochemical Society  
(**1996**) 143:736-744

[Calculation of Mineral Properties with the Electron Gas Model](/file_url/253)  
Gordon, Roy G.; Lacks, Daniel J.  
Molecular Engineering  
(**1996**) 6:63-79

[Atmospheric pressure chemical vapor deposition of titanium nitride from titanium bromide ammonia](/file_url/254)  
Gordon, Roy G.; Frisbie, Ross W.; Musher, Joshua; Thornton, John  
Materials Research Society Symposium Proceedings (Covalent Ceramics III-Science and Technology of Non-oxides)  
(**1996**) 410:283-288

[Preparation and properties of transparent conductors](/file_url/255)  
Gordon, Roy G.  
Materials Research Society Symposium Proceedings (Thin Films for Photovoltaic and Related Device Applications)  
(**1996**) 426:419-429

[Depositions and Reactions of Metals and Metal Compounds](/file_url/256)  
Gordon, Roy G.  
Electronic Materials Chemistry  
(**1996**) 171-197

[Optimization of textured-dielectric coatings for crystalline-silicon solar cells](/file_url/257)  
Gee, James M.; Gordon, Roy G.  
Institute of Electrical and Electronics Engineers Photovoltaic Special Conference  
(**1996**) 25:733-736

[Low-temperature atmospheric-pressure metal-organic chemical vapor deposition of molybdenum nitride thin films](/file_url/258)  
Fix, Renaud; Gordon, Roy G.; Hoffman, David M.  
Thin Solid Films  
(**1996**) 288:116-119

[Step Coverage and Material Properties of CVD Titanium Nitride Films from TDMAT and TDEAT Organic Precursors](/file_url/259)  
Toprac, Anthony J.; Wang, Shi-Qing; Musher, Joshua; Gordon, Roy G.  
Materials Research Society Symposium Proceedings (Evolution of Thin Film and Surface Structure and Morphology)  
(**1995**) 355:323-328

[Calculations of Pressure-Induced Phase Transitions in Mantle Minerals](/file_url/260)  
Lacks, Daniel J.; Gordon, Roy G.  
Physics and Chemistry of Minerals  
(**1995**) 22:145-150

[Use of generalized gradient approximation in pseudopotential calculations of solids](/file_url/261)  
Juan, Yu-Min; Kaxiras, Efthimios; Gordon, Roy G.  
American Physical Society Physical Review B: Condensed Matter  
(**1995**) 51:9521-9525

[CVD precursors containing hydropyridine ligands](/file_url/262)  
Gordon, Roy G.; Thornton, John; Chen, Feng  
Materials Research Society Symposium Proceedings (Chemical Vapor Deposition of Refractory Metals and Ceramics III)  
(**1995**) 363:183-194