Alternating layer chemical vapor deposition (ALD) of metal silicates and oxides for gate insulators
Publication information:
Gordon, Roy, Jill Becker, Dennis Hausmann, and Seigi Suh. “Alternating Layer Chemical Vapor Deposition (ALD) of Metal Silicates and Oxides for Gate Insulators”. Materials Research Society Symposium Proceedings 670, no. Gate Stack and Silicide Issues in Silicon Processing II (2001): K2.4/1-K2.4/6.