Atomic layer deposition of insulating nitride interfacial layers for germanium metal oxide semiconductor field effect transistors with high-k oxide/tungsten nitride gate stacks
Publication information:
Kim, Kyoung-Ha, Roy Gordon, Andrew Ritenour, and Dimitri Antoniadis. “Atomic Layer Deposition of Insulating Nitride Interfacial Layers for Germanium Metal Oxide Semiconductor Field Effect Transistors With High-K Oxide Tungsten Nitride Gate Stacks”. Applied Physics Letters 90, no. 21 (2007): 212104/1-212104/3.