Atomic layer deposition of Sc2O3 for passivating AlGaN/GaN high electron mobility transistor devices
Publication information:
Wang, Xinwei, Omair Saadat, Bin Xi, Xiabing Lou, Richard Molnar, Tomas Palacios, and Roy Gordon. “Atomic Layer Deposition of Sc2O3 for Passivating AlGaN GaN High Electron Mobility Transistor Devices”. Applied Physics Letters 101, no. 23 (2012): 232109.1-9.