Effects of forming gas anneal on ultrathin InGaAs nanowire metal-oxide-semiconductor field-effect transistors
Publication information:
Si, Mengwei, Jiangjiang Gu, Xinwei Wang, Jiayi Shao, Xuefei Li, Michael Manfra, Roy Gordon, and Peide Ye. “Effects of Forming Gas Anneal on Ultrathin InGaAs Nanowire Metal-Oxide-Semiconductor Field-Effect Transistors”. Applied Physics Letters 102, no. 9 (2013): 093505.1-5.