GaAs Enhancement-Mode NMOSFETs Enabled by Atomic Layer Epitaxial La1.8Y0.2O3 as Dielectric
Publication information:
Dong, Wang, Zhang, Li, Gordon, and Ye. “GaAs Enhancement-Mode NMOSFETs Enabled by Atomic Layer Epitaxial La1.8Y0.2O3 As Dielectric”. IEEE Electron Device Letters 34, no. 4 (2013): 487-89.