Heteroepitaxy of La2O3 and La2-xYxO3 on GaAs(111)A by Atomic Layer Deposition: Achieving Low Interface Trap Density
Publication information:
Wang, Xinwei, Lin Dong, Jingyun Zhang, Yiqun Liu, and Peide Ye. “Heteroepitaxy of La2O3 and La2-XYxO3 on GaAs(111)A by Atomic Layer Deposition: Achieving Low Interface Trap Density”. Nano Letters 13 (2013): 594-99.