High performance atomic-layer-deposited LaLuO3/GE-on-insulator p-channel metal-oxide-semiconductor field-effect transistor with thermally grown GeO2 as interfacial passivation layer
Publication information:
Gu, Liu, Xu, Celler, Gordon, and Ye. “High Performance Atomic-Layer-Deposited LaLuO3 GE-on-Insulator P-Channel Metal-Oxide-Semiconductor Field-Effect Transistor With Thermally Grown GeO2 As Interfacial Passivation Layer”. Applied Physics Letters 97, no. 1 (2010): 012106/1-012106/3.