Impact of ultrathin Al2O3 barrier layer on electrical properties of LaLuO3 metal-oxide-semiconductor devices
Publication information:
Liu, Yiqun, Shaoping Shen, Leonard Brillson, and Roy Gordon. “Impact of Ultrathin Al2O3 Barrier Layer on Electrical Properties of LaLuO3 Metal-Oxide-Semiconductor Devices”. Applied Physics Letters 98, no. 12 (2011): 122907.1-7.