Vapor Deposition of Metal Oxides and Silicates: Possible Gate Insulators for Future Microelectronics
Publication information:
Gordon, Roy, Jill Becker, Dennis Hausmann, and Seigi Suh. “Vapor Deposition of Metal Oxides and Silicates: Possible Gate Insulators for Future Microelectronics”. Chemistry of Materials 13, no. 8 (2001): 2463-64.